Untitled
Abstract: No abstract text available
Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET
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Si5479DU
Si5479DU-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si5479
Abstract: No abstract text available
Text: Si5479DU Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.021 @ VGS = −4.5 V −16.9 0.028 @ VGS = −2.5 V −16 0.039 @ VGS = −1.8 V −16 VDS (V) −12 Qg (Typ) 21 nC D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5479DU
Si5479DU-T1--E3
S-50938--Rev.
08-May-05
si5479
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Untitled
Abstract: No abstract text available
Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET
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Si5479DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET
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Si5479DU
18-Jul-08
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4468
Abstract: C 6090 transistor c 6090 AN609
Text: Si5479DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5479DU
AN609
20-Jun-07
4468
C 6090
transistor c 6090
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Untitled
Abstract: No abstract text available
Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET
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Si5479DU
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET
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Si5479DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET
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Si5479DU
Si5479DU-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET
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PDF
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Si5479DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET
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Si5479DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si5479DU
Abstract: No abstract text available
Text: SPICE Device Model Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5479DU
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si5479DU Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.021 @ VGS = −4.5 V −16.9 0.028 @ VGS = −2.5 V −16 0.039 @ VGS = −1.8 V −16 VDS (V) −12 Qg (Typ) 21 nC D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr
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Si5479DU
Si5479DU-T1--E3
08-Apr-05
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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si5480
Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT
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Si6463BDQ
Si6459BDQ-T1-GE3
SI5944DU-T1-E3
SI5944DU-T1-GE3
SI5945DU-T1-E3
SI5945DU-T1-GE3
SI5947DU-T1-E3
SI5947DU-T1-GE3
PPAKSC75
si5480
SiA913DJ-T1-GE3
SIA513DJ-T1-E3
SI6404DQ-T1
SIA411DJ-T1-E3
SIB414DK-T1-E3
SI6913DQ-T1-E3
SIA513DJ-T1-GE3
SI6925ADQ-T1-E3
SI6981DQ-T1-GE3
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