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    SI4825 Price and Stock

    Vishay Siliconix SI4825DDY-T1-GE3

    MOSFET P-CH 30V 14.9A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4825DDY-T1-GE3 Digi-Reel 23,261 1
    • 1 $1.45
    • 10 $0.917
    • 100 $1.45
    • 1000 $0.43444
    • 10000 $0.43444
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    SI4825DDY-T1-GE3 Cut Tape 23,261 1
    • 1 $1.45
    • 10 $0.917
    • 100 $1.45
    • 1000 $0.43444
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    SI4825DDY-T1-GE3 Reel 22,500 2,500
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    RS SI4825DDY-T1-GE3 Bulk 2,500
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    Skyworks Solutions Inc SI4825-A10-CS

    RF RX AM/FM 504KHZ-1.75MHZ SOIC
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    DigiKey SI4825-A10-CS Tube 48 48
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    Mouser Electronics SI4825-A10-CS 91
    • 1 $4.07
    • 10 $3.37
    • 100 $2.76
    • 1000 $2.48
    • 10000 $1.9
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    Richardson RFPD SI4825-A10-CS 1
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    Skyworks Solutions Inc SI4825-DEMO

    BOARD EVAL SI4825
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    DigiKey SI4825-DEMO Bulk 1
    • 1 $37.88
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    Richardson RFPD SI4825-DEMO 1
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    Skyworks Solutions Inc SI4825-A20-CS

    RF RX AM/FM
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    Vishay Siliconix SI4825DY-T1-E3

    MOSFET P-CH 30V 8.1A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4825DY-T1-E3 Reel 2,500
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    SI4825DY-T1-E3 Cut Tape 1
    • 1 $2.08
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    SI4825DY-T1-E3 Digi-Reel 1
    • 1 $2.08
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    • 100 $2.08
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    Find more SI4825 price and stock on Findchips.com

    SI4825 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4825-A10-CS Silicon Laboratories RF Receivers, RF/IF and RFID, IC RCVR AM/FM/SW MECH 24-SOIC Original PDF
    SI4825-A10-CSR Silicon Laboratories RF Receivers, RF/IF and RFID, IC RCVR AM/FM/SW MECH 24-SOIC Original PDF
    SI4825DDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 14.9A 8SOIC Original PDF
    SI4825-DEMO Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVAL SI4825 Original PDF
    SI4825DY Vishay FET, P-CHANNEL, 30V, RDS.022OHM, SO-8 Original PDF
    Si4825DY Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI4825DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI4825DY Vishay Siliconix MOSFETs Original PDF
    Si4825DY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    Si4825DY-T1 Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI4825DYT1E3 Vishay FET, P-CHANNEL, 30V, RDS.022OHM, SO-8 Original PDF
    SI4825DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 8.1A 8-SOIC Original PDF
    SI4825DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 8.1A 8-SOIC Original PDF

    SI4825 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc9018

    Abstract: No abstract text available
    Text: AN738 Si4825/36-A A NTENNA , S CHEMATIC , L AYOUT AND D E S I G N G UIDEL INES 1. Introduction This document provides general Si4825/36-A design and AM/FM/SW antenna selection guidelines, including schematic, BOM and PCB layout. All users should follow the Si4825/36-A design guidelines presented in Section 2


    Original     		PDF AN738 Si4825/36-A Si4825 Si4836 2sc9018

    Untitled

    Abstract: No abstract text available
    Text: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4825DY 2002/95/EC Si4825DY-T1-E3 Si4825DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4825DY

    Abstract: V366
    Text: SPICE Device Model Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4825DY 13-Apr-01 V366

    Si4825DY

    Abstract: Si4825DY-T1-E3
    Text: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4825DY 2002/95/EC Si4825DY-T1-E3 Si4825DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4825DDY 18-Jul-08

    SI4825DDY-T1-GE3

    Abstract: No abstract text available
    Text: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4825DDY Si4825DDY-T1-GE3 18-Jul-08

    Si4825DY

    Abstract: Si4825DY-T1-E3
    Text: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4825DY 2002/95/EC Si4825DY-T1-E3 Si4825DY-T1-GE3 18-Jul-08

    Si4825DY

    Abstract: Si4825DY-T1 Si4825DY-T1-E3
    Text: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • TrenchFET Power MOSFETs • 100 % Rg Tested Pb-free Available RoHS* COMPLIANT S


    Original     		PDF Si4825DY Si4825DY-T1 Si4825DY-T1-E3 08-Apr-05

    74112

    Abstract: AN609 Si4825DY
    Text: Si4825DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4825DY AN609 14-Nov-05 74112

    5458

    Abstract: M 3101 74209 AN609
    Text: Si4825DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4825DDY AN609, 15-Sep-08 5458 M 3101 74209 AN609

    Untitled

    Abstract: No abstract text available
    Text: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.014 @ VGS = −10 V −11.5 0.022 @ VGS = −4.5 V −9.2 SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G Top View Ordering Information: Si4825DY Si4825DY-T1 (with Tape and Reel)


    Original     		PDF Si4825DY Si4825DY-T1 Si4825DY--E3 Si4825DY-T1--E3 08-Apr-05

    Si4825DY

    Abstract: Si4825DY-T1-E3
    Text: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4825DY 2002/95/EC Si4825DY-T1-E3 Si4825DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4825-DEMO Si4825 D EMO B OARD U SER ’ S G UIDE 1. Features ATAD analog tune and analog display AM/FM/SW radio Worldwide FM band support 64–109 MHz with 18 bands, see the Table 1 Worldwide AM band support 504–1750 kHz with 5 bands, see the Table 1


    Original     		PDF Si4825-DEMO Si4825

    SI4825DDY-T1-GE3

    Abstract: SI4825DDY Si4825DY Si4825DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4825DDY vs. Si4825DY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4825DDY-T1-E3 replaces Si4825DY-T1-E3 Si4825DDY-T1-GE3 replaces Si4825DY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4825DDY Si4825DY Si4825DDY-T1-E3 Si4825DY-T1-E3 Si4825DDY-T1-GE3 Si4825DY-T1-GE3 15-Jul-09

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4825DDY Si4825DDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • TrenchFET Power MOSFETs • 100 % Rg Tested Pb-free Available RoHS* COMPLIANT S


    Original     		PDF Si4825DY Si4825DY-T1 Si4825DY-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4825DDY Si4825DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4825DY 2002/95/EC Si4825DY-T1-E3 Si4825DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4825DDY Si4825DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4825DY

    Abstract: Si4825DY-T1
    Text: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.014 @ VGS = −10 V −11.5 0.022 @ VGS = −4.5 V −9.2 SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G Top View Ordering Information: Si4825DY Si4825DY-T1 (with Tape and Reel)


    Original     		PDF Si4825DY Si4825DY-T1 Si4825DY--E3 Si4825DY-T1--E3 S-50129--Rev. 24-Jan-05

    Untitled

    Abstract: No abstract text available
    Text: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4825DY 2002/95/EC Si4825DY-T1-E3 Si4825DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4825DDY-T1-GE3

    Abstract: SI4825DDY-T1-GE3 MARKING 68926
    Text: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4825DDY Si4825DDY-T1-GE3 11-Mar-11 SI4825DDY-T1-GE3 MARKING 68926

    TG-UTB01526

    Abstract: SL4X30MW100T DIODE S4 61A 2sc9018 z5u transistor SL8X50MW70T SL5X7X100MW70T TG-UTB01527S UMEC TG-UTB01526
    Text: AN738 Si4825/36-A 天 线 原 理 图 、 布 局 和 设 计 指 南 1。 引言 本文档提供了常规 Si4825/36-A 设计和 AM/FM/SW 天线选型指南，包括原理图、BOM 和 PCB 布局。所有用户均应 遵守第 2 和 3 节中的 Si4825/36-A 设计指南，并根据第 4 到 8 节的内容在具体的应用情况和所用设备的基础上选择


    Original     		PDF AN738 Si4825/36-A Si4825 Si4836 TG-UTB01526 SL4X30MW100T DIODE S4 61A 2sc9018 z5u transistor SL8X50MW70T SL5X7X100MW70T TG-UTB01527S UMEC TG-UTB01526

    Si4825DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4825DY P-Channel 30-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si4825DY