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    SI4406DY Price and Stock

    Vishay Siliconix SI4406DY-T1-E3

    MOSFET N-CH 30V 13A 8SO
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    DigiKey SI4406DY-T1-E3 Reel
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    RS SI4406DY-T1-E3 Bulk 2,500
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    Vishay Siliconix SI4406DY-T1-GE3

    MOSFET N-CH 30V 13A 8SO
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    Vishay Intertechnologies SI4406DY-T1-E3

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    Bristol Electronics SI4406DY-T1-E3 5,000
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    Quest Components SI4406DY-T1-E3 4,000
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    Vishay Intertechnologies SI4406DYT1E3

    N-CHANNEL 30-V (D-S) MOSFET Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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    ComSIT USA SI4406DYT1E3 2,500
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    SI4406DY Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4406DY Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI4406DY Vishay Siliconix MOSFETs Original PDF
    Si4406DY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    Si4406DY-T1 Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI4406DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 13A 8-SOIC Original PDF
    SI4406DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 13A 8-SOIC Original PDF

    SI4406DY Datasheets Context Search

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    SI4406DY

    Abstract: No abstract text available
    Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % RG Tested


    Original     		PDF Si4406DY Si4406DY-T1 Si4406DY-T1-E3 18-Jul-08

    Si4406DY

    Abstract: No abstract text available
    Text: Si4406DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V 17


    Original     		PDF Si4406DY S-20065--Rev. 04-Mar-02

    SI4406DY

    Abstract: No abstract text available
    Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous


    Original     		PDF Si4406DY Si4406DY-T1-E3 Si4406DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4406DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4406DY S-51095Rev. 13-Jun-05

    SI4406DY

    Abstract: No abstract text available
    Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous


    Original     		PDF Si4406DY Si4406DY-T1-E3 Si4406DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN609

    Abstract: Si4406DY
    Text: Si4406DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4406DY AN609 29-Aug-05

    Si4406DY

    Abstract: 70702
    Text: SPICE Device Model Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4406DY 18-Jul-08 70702

    SI4406DY

    Abstract: No abstract text available
    Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V


    Original     		PDF Si4406DY Si4406DY-T1 08-Apr-05

    SI4406DY

    Abstract: No abstract text available
    Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous


    Original     		PDF Si4406DY Si4406DY-T1-E3 Si4406DY-T1-GE3 11-Mar-11

    Si4406DY

    Abstract: Si4406DY-T1-E3
    Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous


    Original     		PDF Si4406DY Si4406DY-T1-E3 Si4406DY-T1-GE3 18-Jul-08

    SI4406DY

    Abstract: No abstract text available
    Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % RG Tested


    Original     		PDF Si4406DY Si4406DY-T1 Si4406DY-T1-E3 08-Apr-05

    Si4406DY

    Abstract: Si4406DY-T1
    Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V


    Original     		PDF Si4406DY Si4406DY-T1 S-03951--Rev. 26-May-03

    Si4406DY

    Abstract: No abstract text available
    Text: \\\ SPICE Device Model Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4406DY 0-to-10V 29-Apr-02

    Si4406DY

    Abstract: No abstract text available
    Text: Si4406DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V


    Original     		PDF Si4406DY 70ance, S-03662--Rev. 14-Apr-03

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original     		PDF VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110