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    SI4162DY Price and Stock

    Vishay Siliconix SI4162DY-T1-GE3

    MOSFET N-CH 30V 19.3A 8SO
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    DigiKey SI4162DY-T1-GE3 Cut Tape 26,321 1
    • 1 $1.33
    • 10 $0.84
    • 100 $1.33
    • 1000 $0.39424
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    SI4162DY-T1-GE3 Digi-Reel 26,321 1
    • 1 $1.33
    • 10 $0.84
    • 100 $1.33
    • 1000 $0.39424
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    SI4162DY-T1-GE3 Reel 25,000 2,500
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    • 10000 $0.3
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    Bristol Electronics SI4162DY-T1-GE3 440 7
    • 1 -
    • 10 $0.75
    • 100 $0.4875
    • 1000 $0.24
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    Quest Components SI4162DY-T1-GE3 352
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    New Advantage Corporation SI4162DY-T1-GE3 60,000 1
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    Vishay Intertechnologies SI4162DY-T1-GE3

    Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 55R1921)
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    Avnet Americas SI4162DY-T1-GE3 Ammo Pack 18 Weeks, 3 Days 1
    • 1 $0.973
    • 10 $0.851
    • 100 $0.609
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    SI4162DY-T1-GE3 Reel 8 Weeks 2,500
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    • 10000 $0.29056
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    Mouser Electronics SI4162DY-T1-GE3 7,950
    • 1 $1.23
    • 10 $0.797
    • 100 $0.539
    • 1000 $0.386
    • 10000 $0.343
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    Verical SI4162DY-T1-GE3 55,000 2,500
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    SI4162DY-T1-GE3 2,500 2,500
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    Arrow Electronics SI4162DY-T1-GE3 2,500 8 Weeks 2,500
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    • 10000 $0.279
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    Newark SI4162DY-T1-GE3 Cut Tape 16 1
    • 1 $0.183
    • 10 $0.183
    • 100 $0.183
    • 1000 $0.183
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    SI4162DY-T1-GE3 Reel 2,500
    • 1 $0.423
    • 10 $0.423
    • 100 $0.423
    • 1000 $0.423
    • 10000 $0.382
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    Bristol Electronics SI4162DY-T1-GE3 7,500
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    SI4162DY-T1-GE3 1,179
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    Quest Components SI4162DY-T1-GE3 6,000
    • 1 $1
    • 10 $1
    • 100 $1
    • 1000 $1
    • 10000 $0.3
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    SI4162DY-T1-GE3 2,000
    • 1 $2
    • 10 $2
    • 100 $2
    • 1000 $0.8
    • 10000 $0.7
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    SI4162DY-T1-GE3 657
    • 1 $1
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    SI4162DY-T1-GE3 109
    • 1 $1
    • 10 $0.8
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    SI4162DY-T1-GE3 15
    • 1 $1.05
    • 10 $0.84
    • 100 $0.84
    • 1000 $0.84
    • 10000 $0.84
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    TTI SI4162DY-T1-GE3 Reel 47,500 2,500
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    • 10000 $0.222
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    TME SI4162DY-T1-GE3 2,694 1
    • 1 $0.842
    • 10 $0.842
    • 100 $0.536
    • 1000 $0.365
    • 10000 $0.277
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    EBV Elektronik SI4162DY-T1-GE3 9 Weeks 2,500
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    Vishay BLH SI4162DY-T1-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4162DY-T1-GE3 137 7
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    • 10 $0.75
    • 100 $0.4875
    • 1000 $0.2812
    • 10000 $0.2812
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    Others SI4162DY

    AVAILABLE EU
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    ComSIT USA SI4162DY 7,500
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    Vishay Intertechnologies SI4162DYT1GE3

    N-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 19.3A I(D), 30V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI4162DYT1GE3 5,000
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    Find more SI4162DY price and stock on Findchips.com

    SI4162DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4162DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 19.3A 8-SOIC Original PDF

    SI4162DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si4162

    Abstract: SI4162D
    Text: Si4162DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 19.3a 0.010 at VGS = 4.5 V a • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF Si4162DY Si4162DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4162 SI4162D

    Untitled

    Abstract: No abstract text available
    Text: Si4162DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 19.3a 0.010 at VGS = 4.5 V a • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF Si4162DY Si4162DY-T1-GE3 150electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4162DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 19.3a 0.010 at VGS = 4.5 V a • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF Si4162DY Si4162DY-T1-GE3 11-Mar-11

    SI4162DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4162DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4162DY 18-Jul-08

    Si4162DY

    Abstract: Si4162DY-T1-GE3 si4162
    Text: Si4162DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 19.3a 0.010 at VGS = 4.5 V a • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF Si4162DY Si4162DY-T1-GE3 11-Mar-11 si4162

    SI4162DY

    Abstract: Si4162DY-T1-GE3
    Text: Si4162DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 19.3a 0.010 at VGS = 4.5 V a • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF Si4162DY Si4162DY-T1-GE3 18-Jul-08

    74925

    Abstract: 1.4542 AN609 Si4162DY
    Text: Si4162DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4162DY AN609, 21-Oct-08 74925 1.4542 AN609

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4162DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4162DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4162DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 19.3a 0.010 at VGS = 4.5 V a • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF Si4162DY Si4162DY-T1-GE3 150emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    BSC123NO8NS3-G

    Abstract: CREE XM-L driver BSC059N04 Cree XM-L power supply driver led 60w schematic BSC123NO8NS3 LT3791-1 SI2306 60w led driver BSC123NO8
    Text: LT3761 60VIN LED Controller with Internal PWM Generator Features n n n n n n n n n n n n n n Description 3000:1 True Color PWM Dimming for LEDs Wide VIN Range: 4.5V to 60V Rail-to-Rail Current Sense Range: 0V to 80V Programmable PWM Dimming Signal Generator


    Original     		PDF LT3761 60VIN QFN-32 QFN-16 TSSOP-16E TSSOP-38E LT3478/LT3478-1 LT3791/LT3791-1 BSC123NO8NS3-G CREE XM-L driver BSC059N04 Cree XM-L power supply driver led 60w schematic BSC123NO8NS3 LT3791-1 SI2306 60w led driver BSC123NO8

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Untitled

    Abstract: No abstract text available
    Text: xDSL ModemRouter Table of Contents DC/DC BUCK CONVERTER, DC/DC BUCK CONVERTER, Energy


    Original     		PDF 1N4148WS-V 500mA BAT54A-V 200mA; OT-23 BAT54W-V OD123 BAV99-V OD-323

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477