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Vishay Siliconix SI4004DY-T1-GE3 MOSFET N-CH 20V 12A 8SO
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SI4004DY Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4004DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 12A 8-SOIC		Original	PDF

SI4004DY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
S10-1617 Abstract: No abstract text available Text: SPICE Device Model Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si4004DY 18-Jul-08 S10-1617
Untitled Abstract: No abstract text available Text: Si4004DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si4004DY AN609, 7091m 5039m 6331m 9944m 5460m 2019m 0747m
Untitled Abstract: No abstract text available Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4004DY 2002/95/EC Si4004DY-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4004DY 2002/95/EC Si4004DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4004DY 2002/95/EC Si4004DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
si4004 Abstract: No abstract text available Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4004DY 2002/95/EC Si4004DY-T1-GE3 18-Jul-08 si4004
Untitled Abstract: No abstract text available Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4004DY 2002/95/EC Si4004DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836