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    SI3442BDV Search Results

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    SI3442BDV Price and Stock

    Vishay Siliconix SI3442BDV-T1-E3

    MOSFET N-CH 20V 3A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3442BDV-T1-E3 Cut Tape 24,567 1
    • 1 $0.95
    • 10 $0.594
    • 100 $0.95
    • 1000 $0.26866
    • 10000 $0.26866
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    SI3442BDV-T1-E3 Digi-Reel 24,567 1
    • 1 $0.95
    • 10 $0.594
    • 100 $0.95
    • 1000 $0.26866
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    SI3442BDV-T1-E3 Reel 18,000 3,000
    • 1 -
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    • 10000 $0.1875
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    Bristol Electronics SI3442BDV-T1-E3 2,255 12
    • 1 -
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    • 100 $0.2925
    • 1000 $0.144
    • 10000 $0.126
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    Quest Components SI3442BDV-T1-E3 5,094
    • 1 $0.36
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    • 1000 $0.168
    • 10000 $0.15
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    SI3442BDV-T1-E3 1,804
    • 1 $0.6
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    • 1000 $0.18
    • 10000 $0.156
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    New Advantage Corporation SI3442BDV-T1-E3 6,000 1
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    • 10000 $0.2293
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    Vishay Siliconix SI3442BDV-T1-BE3

    N-CHANNEL 2.5-V (G-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3442BDV-T1-BE3 Digi-Reel 1,507 1
    • 1 $0.95
    • 10 $0.594
    • 100 $0.95
    • 1000 $0.26866
    • 10000 $0.26866
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    SI3442BDV-T1-BE3 Cut Tape 1,507 1
    • 1 $0.95
    • 10 $0.594
    • 100 $0.95
    • 1000 $0.26866
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    SI3442BDV-T1-BE3 Reel 3,000
    • 1 -
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    Vishay Siliconix SI3442BDV-T1-GE3

    MOSFET N-CH 20V 3A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3442BDV-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SI3442BDV-T1-E3

    Mosfet Transistor, N Channel, 3 A, 20 V, 0.045 Ohm, 4.5 V, 1.8 V |Vishay SI3442BDV-T1-E3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI3442BDV-T1-E3 Reel 3,000
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    Bristol Electronics SI3442BDV-T1-E3 1,365
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    Quest Components SI3442BDV-T1-E3 2,868
    • 1 $1.04
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    • 100 $1.04
    • 1000 $0.416
    • 10000 $0.364
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    SI3442BDV-T1-E3 2,588
    • 1 $0.6
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    • 100 $0.6
    • 1000 $0.18
    • 10000 $0.156
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    Vishay Intertechnologies SI3442BDV-T1-GE3

    N Channel Mosfet, 20V, 4.2A; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Vishay SI3442BDV-T1-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI3442BDV-T1-GE3 Reel 3,000
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    SI3442BDV-T1-GE3 Cut Tape 3,000
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    Bristol Electronics SI3442BDV-T1-GE3 1,673
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    Quest Components SI3442BDV-T1-GE3 1,338
    • 1 $0.748
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    • 100 $0.748
    • 1000 $0.2992
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    Find more SI3442BDV price and stock on Findchips.com

    SI3442BDV Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET Original PDF
    Si3442BDV SPICE Device Model Vishay N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI3442BDV-T1-E3 Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI3442BDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 3A 6-TSOP Original PDF
    SI3442BDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 3A 6-TSOP Original PDF

    SI3442BDV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si3442BDV

    Abstract: Si3442BDV-T1-E3
    Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3442BDV 2002/95/EC Si3442BDV-T1-E3 Si3442BDV-T1-GE3 12lectual 18-Jul-08

    A 2039

    Abstract: AN609 Si3442BDV 74658
    Text: Si3442BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3442BDV AN609 04-May-07 A 2039 74658

    Si3442BDV

    Abstract: Si3442BDV-T1-E3 tOP MaRKinGS
    Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 RoHS COMPLIANT TSOP-6 Top V iew 3 mm 1 6 2 5 3 4 (1, 2, 5, 6) D (3) G 2.85 mm (4) S Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free)


    Original     		PDF Si3442BDV Si3442BDV-T1-E3 18-Jul-08 tOP MaRKinGS

    Si3442BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3442BDV 18-Jul-08

    Si3442BDV-T1-GE3

    Abstract: No abstract text available
    Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3442BDV 2002/95/EC Si3442BDV-T1-E3 Si3442BDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3442BDV Vishay Siliconix New Product N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.057 @ VGS = 4.5 V 4.2 0.090 @ VGS = 2.5 V 3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm (4) S N-Channel MOSFET Ordering Information: Si3442BDV-T1


    Original     		PDF Si3442BDV Si3442BDV-T1 S-32138--Rev. 27-Oct-03

    Untitled

    Abstract: No abstract text available
    Text: Si3442BDV Vishay Siliconix New Product N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.057 @ VGS = 4.5 V 4.2 0.090 @ VGS = 2.5 V 3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm (4) S N-Channel MOSFET Ordering Information: Si3442BDV-T1—E3


    Original     		PDF Si3442BDV Si3442BDV-T1--E3 S-32418--Rev. 24-Nov-03

    SI3442DV-T1

    Abstract: Si3442BDV Si3442BDV-T1-E3 Si3442DV
    Text: Specification Comparison Vishay Siliconix Si3442BDV vs. Si3442DV Description: N-Channel, 2.5 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3442BDV-T1 Replaces Si3442DV-T1 Si3442BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3442DV-T1-E3 (Lead (Pb)-free version)


    Original     		PDF Si3442BDV Si3442DV SSi3442BDV-T1 Si3442DV-T1 Si3442BDV-T1-E3 Si3442DV-T1-E3 06-Nov-06

    Untitled

    Abstract: No abstract text available
    Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3442BDV 2002/95/EC Si3442BDV-T1-E3 Si3442BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si3442BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3442BDV S-50383Rev. 21-Mar-05

    Untitled

    Abstract: No abstract text available
    Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.057 @ VGS = 4.5 V 4.2 0.090 @ VGS = 2.5 V 3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm (4) S N-Channel MOSFET Ordering Information: Si3442BDV-T1—E3


    Original     		PDF Si3442BDV Si3442BDV-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3442BDV 2002/95/EC Si3442BDV-T1-E3 Si3442BDV-T1-GE3 11-Mar-11

    Si3442BDV

    Abstract: Si3442BDV-T1 72504
    Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.057 @ VGS = 4.5 V 4.2 0.090 @ VGS = 2.5 V 3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm (4) S N-Channel MOSFET Ordering Information: Si3442BDV-T1—E3


    Original     		PDF Si3442BDV Si3442BDV-T1--E3 S-40424--Rev. 15-Mar-04 Si3442BDV-T1 72504

    Si3442BDV

    Abstract: Si3442BDV-T1-E3
    Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 RoHS COMPLIANT TSOP-6 Top V iew 3 mm 1 6 2 5 3 4 (1, 2, 5, 6) D (3) G 2.85 mm (4) S Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free)


    Original     		PDF Si3442BDV Si3442BDV-T1-E3 08-Apr-05

    LM556 PWM

    Abstract: lm556 application notes LM324AM diode U3d LM556 timer diode U3d on led driver board schematic LED astable multivibrator RD-168 ic lm324am datasheet
    Text: National Semiconductor RD-168 Applications Design Center November 2008 1.0 Design Specifications Inputs Output #1 VinMin=6V Vout1=20V VinMax=12V Iout1=0.1A The ambient light adaptive LED driver automatically adjusts display brightness for changing ambient light conditions, providing a more viewable display with better contrast. The design drives five series connected LEDs from an input voltage


    Original     		PDF RD-168 CSP-9-111S2) CSP-9-111S2. LM556 PWM lm556 application notes LM324AM diode U3d LM556 timer diode U3d on led driver board schematic LED astable multivibrator RD-168 ic lm324am datasheet

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Si4830

    Abstract: Fast Switching mosfet SI3433B smd diode 615
    Text: Notebook Table of Contents POWER MANAGEMENT, Charger Power. 3 POWER MANAGEMENT, CPU Power. 6


    Original     		PDF 4110ppm 400ppm Q-101 BZX384 OD323 Si4830 Fast Switching mosfet SI3433B smd diode 615

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    lenovo

    Abstract: ic 3207 gp lenovo battery 1r33 PMH7 sot23-6 aa9 foxconn VCC1R05B CC42 lenovo r60
    Text: 5 4 3 THERMAL SENSEER 2 1 CLK GEN YONAH uFCPGA 478PIN PAGE 5 PAGE 2 PAGE 3,4 AGTL+ FSB_533/667MHz 4X Data 2X Address D D VCC3M/VCC5M MAX1901 PAGE 41 LVDS SO-DIMM DRAM DIMMS*2 Dual Channel DDR2 533/667MHz PAGE 10 LCD PAGE 15 CALISTOGA 2R5M/1R2AUX (MAX8563)


    Original     		PDF 478PIN 533/667MHz MAX1901) 533/667MHz 945GM MAX8563) VCC1R5M/VCC1R05B MAX1540) PCI1520 MAX8632) lenovo ic 3207 gp lenovo battery 1r33 PMH7 sot23-6 aa9 foxconn VCC1R05B CC42 lenovo r60