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    STD1766 Search Results

    STD1766 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STD1766 AUK NPN Silicon Transistor Original PDF

    STD1766 Datasheets Context Search

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    8002 amplifier

    Abstract: KST-8002-001 TRANSISTOR 10003 STB1188 STD1766 kst80
    Text: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766


    Original     		PDF STB1188 STD1766 OT-89 KST-8002-001 -200mA -500mA, 30MHz 8002 amplifier KST-8002-001 TRANSISTOR 10003 STB1188 STD1766 kst80

    SOT89 MARKING CODE B2

    Abstract: STD1766 STB1188
    Text: ㅇ STD1766 NPN Silicon Transistor Descriptions • Medium power amplifier PIN Connection Features • PC Collector power dissipation =2W (Ceramic substrate of 250 ㎟x0.8t used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188


    Original     		PDF STD1766 STB1188 OT-89 KSD-T5B004-003 SOT89 MARKING CODE B2 STD1766 STB1188

    Untitled

    Abstract: No abstract text available
    Text: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766


    Original     		PDF STB1188 STD1766 OT-89 KST-8002-002

    Untitled

    Abstract: No abstract text available
    Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188


    Original     		PDF STD1766 STB1188 OT-89 KST-8006-002

    STB1188

    Abstract: STD1766
    Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188


    Original     		PDF STD1766 STB1188 OT-89 KST-8006-001 200mA 500mA STB1188 STD1766

    STD1766

    Abstract: Transistor B2 SOT-89 STB1188
    Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188


    Original     		PDF STD1766 STB1188 OT-89 KST-8006-002 STD1766 Transistor B2 SOT-89 STB1188

    Untitled

    Abstract: No abstract text available
    Text: STB1188 PNP Silicon Transistor Description PIN Connection • Medium power amplifier Features  PC Collector power dissipation =1W (Ceramic substrate of 250 ㎟x0.8t used)  Low collector saturation voltage : VCE(sat)=-0.5V (Typ.)  Complementary pair with STD1766


    Original     		PDF STB1188 STD1766 OT-89 KSD-T5B022-002

    STB1188

    Abstract: Transistor 8002 amplifier STD1766
    Text: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766


    Original     		PDF STB1188 STD1766 OT-89 KST-8002-002 STB1188 Transistor 8002 amplifier STD1766

    Untitled

    Abstract: No abstract text available
    Text: STD1766 NPN Silicon Transistor Descriptions • Medium power am plifier PIN Connection Features • PC Collect or pow er dissipat ion = 2W ( Ceram ic subst rat e of 250 x 0.8t used) • Low collect or sat urat ion volt age : VCE( sat ) = 0.5V( Typ.) • Com plem ent ary pair wit h STB1188


    Original     		PDF STD1766 STB1188 OT-89 KSD-T5B004-003

    Untitled

    Abstract: No abstract text available
    Text: STB1188 PNP Silicon Transistor Description PIN Connection • Medium power am plifier Features • PC Collect or pow er dissipat ion = 1W ( Ceram ic subst at e of 250 x 0.8t used) • Low collect or sat urat ion volt age : VCE( sat ) = - 0.5V( Typ.) • Com plem ent ary pair wit h STD1766


    Original     		PDF STB1188 STD1766 OT-89 KSD-T5B022-001

    STB1188

    Abstract: STD1766
    Text: STB1188 PNP Silicon Transistor Description PIN Connection • Medium power amplifier Features • PC Collector power dissipation =1W (Ceramic substate of 250 ㎟x0.8t used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766


    Original     		PDF STB1188 STD1766 OT-89 KSD-T5B022-000 STB1188 STD1766

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


    Original     		PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300