10003 NPN
Abstract: STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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STD1664
STB1132
OT-89
KST-8004-001
500mA,
10003 NPN
STD1664
STB1132
a2 sot-89
KST-8004-001
TRANSISTOR 10003
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STB1132
Abstract: STD1664
Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664
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STB1132
STD1664
OT-89
KST-8001-002
-500mA,
-50mA
-50mA,
30MHz
STB1132
STD1664
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STD1664
Abstract: Transistor STB1132 a2 sot-89
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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Original
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PDF
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STD1664
STB1132
OT-89
KSD-T5B009-000
STD1664
Transistor
STB1132
a2 sot-89
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Untitled
Abstract: No abstract text available
Text: STD1664 NPN Silicon Transistor PIN Connection Description • Medium power am plifier applicat ion Features • PC Collect or pow er dissipat ion = 1W ( Ceram ic subst at e of 250 x 0.8t used) • Low collect or sat urat ion volt age : VCE( sat ) = 0.15V( Typ.)
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Original
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PDF
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STD1664
STB1132
OT-89
KSD-T5B009-001
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Untitled
Abstract: No abstract text available
Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664
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Original
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PDF
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STB1132
STD1664
OT-89
KST-8001-003
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STB1132
Abstract: Transistor STD1664 a1 sot-89
Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664
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PDF
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STB1132
STD1664
OT-89
KST-8001-003
STB1132
Transistor
STD1664
a1 sot-89
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Untitled
Abstract: No abstract text available
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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Original
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PDF
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STD1664
STB1132
OT-89
KST-8004-002
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Untitled
Abstract: No abstract text available
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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Original
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PDF
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STD1664
STB1132
OT-89
KST-8004-003
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STD1664
Abstract: STB1132
Text: STB1132 PNP Silicon Transistor Description PIN • Medium power amplifier Features • PC Collector power dissipation =1W(Ceramic substate of 250 ㎟x0.8t used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664
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PDF
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STB1132
STD1664
OT-89
KSD-T5B021-001
STD1664
STB1132
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STD1664
Abstract: STB1132
Text: STD1664 NPN Silicon Transistor PIN Connection Description • Medium power amplifier application Features • PC Collector power dissipation =1W (Ceramic substate of 250 ㎟x0.8t used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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Original
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PDF
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STD1664
STB1132
OT-89
KSD-T5B009-001
STD1664
STB1132
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Untitled
Abstract: No abstract text available
Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664
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Original
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PDF
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STB1132
STD1664
OT-89
KST-8001-003
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Untitled
Abstract: No abstract text available
Text: STB1132 PNP Silicon Transistor Description PIN • Medium power am plifier Features • PC Collect or pow er dissipat ion = 1W( Ceram ic subst at e of 250 x 0.8t used) • Low collect or sat urat ion volt age : VCE( sat ) = - 0.2V( Typ.) • Com plem ent ary pair wit h STD1664
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Original
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PDF
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STB1132
STD1664
OT-89
KSD-T5B021-001
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Untitled
Abstract: No abstract text available
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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Original
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PDF
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STD1664
STB1132
OT-89
KST-8004-003
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Untitled
Abstract: No abstract text available
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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STD1664
STB1132
OT-89
KST-8004-003
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
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