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    SGM5102F

    Abstract: e9024 lD-10mA
    Text: SONY C O R P / C O M P O N E N T PR OD S 0302303 0003101 T « S O N Y MTE D SGM5102F SONY. GaAs N-chanpel Microwave MES FET Description The SGM5102F is an N-channel GaAs ME$ FET designed for low noise amplifiers from C to Ku bands. SGM5102F-T6 is for taping.


    OCR Scan     		00D3101 SGM5102F SGM5102F SGM5102F-T6 QD03103 SGMS102F T-31-25 e9024 lD-10mA PDF

    e9024

    Abstract: No abstract text available
    Text: SGM5102F Son y. GaAs N-channel Microwave MES FET Description The SGM5102F is an N-channel GaAs MES FET designed fo r low noise am plifiers from C to Ku bands. SGM5102F-T6 is fo r taping. MES: Metal Sem iconductor Package O u tlin e U n it : mm Structu re GaAs N-channel MES field effect tran sisto r


    OCR Scan     		SGM5102F SGM5102F SGM5102F-T6 e9024 PDF

    sgh5002f

    Abstract: SGM2004M 1T32 dm211 DM-111 DM-211 1T339 2SK152 SGM2006M phd003
    Text: 1. Type Page List of Model Names Type Page Type Page 1T32/1T32A 31 SLD202U/V 73 SLU302XR 193 1T33/1T33A 34 SLD202U-3/V-3 76 SLU303VR 197 1T33C 37 SLD203AV 79 SLU303XR 201 1T339 335 SLD301B 102 SLU304VR 205 1T359 49 SLD301V 82 SLU304XR 209 1T360 51 SLD301WT


    OCR Scan     		1T32/1T32A 1T33/1T33A 1T33C 1T339 1T359 1T360 1T362 1T363 1T364 PHD003 sgh5002f SGM2004M 1T32 dm211 DM-111 DM-211 2SK152 SGM2006M PDF