Untitled
Abstract: No abstract text available
Text: bGE D • ö23SbD5 OQMbbtn 112 « S I E G T ^/-// SIEMENS SFH414 SFH415 SFH416 SIEMENS AKT IENGESELLSCHAF GaAs INFRARED EMITTER Package Dimensions in Inches mm SFH 414/415 S u rface n o l flat 2 1 7 (5 5 ) .0 2O1 (5 1) 10 189(4 8) 024 (0 6 ) ! I 016 (0 4;
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23SbD5
SFH414
SFH415
SFH416
T13/4
temper150
415-S
414-T
415-T
416-Q
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SFH415 applications
Abstract: No abstract text available
Text: SFH 415 SFH 416 SIEMENS GaAs Infrared Emitter Dimensions in inches mm C t»p Position .217(5.5) .024(0.6) .016(0.4) .100(2.54) sp a ri a^ng T (1.ÔL, (12p .071(14 .047 T A. Cathode (Diode) ' Collector (Transistor) Approx. weight 0.4g CoHector SFH416 FEATURES
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SFH416
SFH415
416-R
-SFH415
SFH416
SFH415 applications
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SFH414
Abstract: S415S
Text: SIEMENS SFH414 SFH415 SFH416 Ò aAs INFRARED EMITTER Package Dimensions in Inches mm SFH 414/415 Chip Position 232(5 9) SFH 416 Surface not flat Crup Position 232(5.9) . FEATU RES • Half Angle SFH414: ±11° SFH415: ± ir SFH416: ±28° • T13/4 Package
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SFH414
SFH415
SFH416
SFH414:
SFH415:
SFH416:
SFH414/415/416
SFH414/4i
S415S
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TP20
Abstract: FH-41
Text: SFH415 SFH416 SIEMENS GaAs INFRARED EMITTER FEA TU R ES • Half Angle S F H 41 5: ±17° S FH 416: +28° • T 13/« Package • Highly Efficient GaAs LEDs • Good Linearity lE=f (lF at High Currents • Radiation in the Near Infrared Range • High Reliability
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SFH415
SFH416
SFH415/416
416-R
41S-S
415-T
415-U
100mA
SFH415/416
TP20
FH-41
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siemens SFH nm
Abstract: sfh418 SFH414
Text: SIEMENS C M P N T S t OPTO 44E D ASBbBEb OODSMfib 5 SIEMENS ISIEX S FH 414 S FH 415 S FH 416 GaAs Infrared Emitter ' - H l - II Package Dimensions in Inches mrh SFH 414/415 CWp Petition ,016(0.4) ( .1*9(4*) .165 (4¿) _ l ra i (M ) .016(0.4)-} .100 <2*54>
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SFH416:
SFH414/415/416
siemens SFH nm
sfh418
SFH414
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-IR-Lumineszenzdioden, hergestellt im Schmelzepitaxieverfahren • Gute Linearität /e = /[/p ] bei hohen Strömen • Sehr hoher Wirkungsgrad
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fl235b05
0DS7717
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8PX43
Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275
Text: Infrared Emitters Radiant Intensity Package Outline Part Number Package TVP» Half Angle Surga Currant Features Page A SFH420 SMTTOPLED ±60" SFH421 SMTTOPLED ± 60 ° 2.5-5 too GaAs, 950 nm. On tape and reel. 7-25 4-8 100 GaAIAs, 880 nm. On tape and reel.
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SFH420
SFH421
BP104
BP103.
SFH205,
BP104,
BP103B.
LD271
LD271L
LD274-1
8PX43
SFH415T
GKDb
L81a
SFH402-2
SFH910
SFH485
SFH462
sfh481-3
LD275
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TSHA3400
Abstract: "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A
Text: CROSS REFFERENCE GUIDE HOfŒYWELL LITON Infrared Emitter SHARP LITON Infrared Emitter SEP8505/8525 LET-209 GL480 LTE-306 SEP8506/8526 LTE-302-M G L360/380 LTE-4206 GL537 LTE-3270 Photo Transistor SEP8405/8425 LTR-209 GL527 LTE-3271T SEP8406/8426 LTR-301 GL538
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SEP8505/8525
SEP8506/8526
SEP8405/8425
SEP8406/8426
SEP8403
HOA708
HOA0860
HOA0870
LTR-209
LTR-301
TSHA3400
"Photo Interrupter" sharp
306 transistor
Infrared emitter
TELEFUNKEN infrared
"Photo Interrupter"
380 transistor
LTR-536AD
LTE-302-M
LTE5238A
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Cathode Approx. weight 0.2 g Area not flat Collector Transistor < o Approx. weight 0.4 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale
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SFH415
SFH416
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Area not flat o Cathode Diode Collector (Transistor) CO (O (O o X 0) GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale
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SFH415
GEX06630
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SFH415T
Abstract: SFH415U Q62703-Q1546 SFH415-T sfh 487-2 Q62703-Q1762
Text: IR-Lumineszenzdioden Gehäuse/Package Infrared Emitters h Type deg. Bestellnummer Ordering code mW/sr 1.3 im SMT-Gehäuse /-peak = 950 nm VF = 1,3 V ( / F = 100 mA) ♦ 8 1.3 in SMT-package (>ipeak = 950 nm) VF = 1.3 V ( / F = 100 mA) SFH420 SFH420-N ±60
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Q62702-P1690
Q62702-P1132
SFH420
SFH420-N
SFH425
Q62702-P330
SFH415
SFH415-S"
SFH415-T
SFH415-U
SFH415T
SFH415U
Q62703-Q1546
sfh 487-2
Q62703-Q1762
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TP20
Abstract: No abstract text available
Text: SIEMENS S FH 415 SFH 416 GaAs INFRARED EMITTER FEATURES • Half Angle SFH415: ±17“ SFH 416: ±28° • T13/4 Package • Highly Efficient GaAs LEDs • Good Linearity lE=f(lF at High Currants • Radiation In the Near Infrared Range • High Pulse Handling Capability
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SFH415:
SFH415/416
FH415
characterlstlcs-SFH416
TP20
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PDF
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SFH400-2
Abstract: LD275-2 IR remote control SFH205 sfh910 LD274-3 LD275-3 SFH402-2 LD242-3 Gaa 725
Text: Infrared Emitters Radiant tntenarty Package Outline r r n 0 r = ~ i p t— !ï-" à i h Part Number Package Type Surge Current HaH Angle mA (t< 10|ie ) A Fealuree Paga SFH420 SMTTOPLED ±60“ 2.5-5 100 GaAs, 950 nm. On tape and reel. 7-25 SFB421 SMTTOPLED
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SFH420
SFB421
SFH205,
BP104
BP103.
BP104,
BP103B.
LD271
LD271L
SFH400-2
LD275-2
IR remote control
SFH205
sfh910
LD274-3
LD275-3
SFH402-2
LD242-3
Gaa 725
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