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    SE3470 Search Results

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    SE3470 Price and Stock

    Honeywell Sensing and Control SE3470-001

    EMITTER IR 880NM 100MA TO-46
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    Honeywell Sensing and Control SE3470-003

    EMITTER IR 880NM 100MA TO-46
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    Honeywell Sensing and Control SE3470-002

    EMITTER IR 880NM 100MA TO-46
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    SE3470 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SE3470 Honeywell AlGaAs Infrared Emitting Diode Original PDF
    SE3470-001 Honeywell Infrared, UV, Visible Emitters, Optoelectronics, DIODE IR EMITTING ALGAAS TO46 Original PDF
    SE3470-002 Honeywell Infrared, UV, Visible Emitters, Optoelectronics, DIODE IR EMITTING ALGAAS TO46 Original PDF
    SE-3470-002 Honeywell LED IRLED 880NM 2 pin TO-46 Original PDF
    SE3470-003 Honeywell Infrared, UV, Visible Emitters, Optoelectronics, DIODE IR EMITTING ALGAAS TO-46 Original PDF
    SE-3470-003 Honeywell LED IRLED 880NM 2 pin TO-46 Original PDF
    SE3470-004 Honeywell AlGaAs Infrared Emitting Diode Original PDF

    SE3470 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Infrared Emitting Diode

    Abstract: SD3443 SD5443 SD5600 SE3470 SE5470
    Text: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range


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    PDF SE3470/5470 SD3421/5421 SD3443/5443/5491phototransistor, SD3410/5410 SD5600 INFRA-83 SE3470/5470 SE3470 SE5470 SD5443 Infrared Emitting Diode SD3443 SD5443 SD5600

    infrared diode

    Abstract: Infrared Emitting Diode SD3443 SD5443 SD5600 SE3470 SE5470 5443 equivalent
    Text: 17 September 1997 SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent


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    PDF SE3470/5470 SD3421/5421 SD3443/5443/5491phototransistor, SD3410/5410 SD5600 INFRA-83 SE3470/5470 SE3470 SE5470 SD5443 infrared diode Infrared Emitting Diode SD3443 SD5443 SD5600 5443 equivalent

    SE3470-002

    Abstract: TO-46 SE5470 SD5600 SE3470 5443 equivalent infrared emitting diode
    Text: Datasheet - SE3470-002 SE3470-002 SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be


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    PDF SE3470-002 SD3421/5421 SE3470-002 TO-46 SE5470 SD5600 SE3470 5443 equivalent infrared emitting diode

    Untitled

    Abstract: No abstract text available
    Text: PHOTONIC DETECTORS INC. High-Power GaAIAs Infrared Emitters Peak Wavelength, 880 nm,Type PDI-E801 PACKAGE DIMENSIONS inch mm CL 45° 0.040 [1.02] 0.145 [3.68] INDUSTRY EQUIVALENTS OD-880W , OP232W & SE3470 1.00 [25.4] MIN 0.145 [3.68] CL 0.112 [2.84] 0.098 [2.49]


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    PDF PDI-E801 OD-880W OP232W SE3470 PDI-E801 100-PDI-E801

    SD5600

    Abstract: SE3470 SE3470-003 SE5470 SD3421
    Text: Datasheet - SE3470-003 SE3470-003 SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be


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    PDF SE3470-003 SD3421/5421 SD5600 SE3470 SE3470-003 SE5470 SD3421

    SE3470-001

    Abstract: SD5600 SE3470 SE3470-002 SE5470 SE5470-001 SE5470-003 TO46 lens phototransistor
    Text: SE3470/5470 FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range


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    PDF SE3470/5470 SD3421/5421 SD3443/5443/5491 SD3410/5410 SD5600 INFRA-83 SE3470/5470 INFRA-22 INFRA-11 SE5470 SE3470-001 SE3470 SE3470-002 SE5470-001 SE5470-003 TO46 lens phototransistor

    metal detectors IC

    Abstract: Single chip metal detector 5630 5630 metal detectors IC METAL DETECTOR circuit for make metal detector schematic SD5620 SD5630
    Text: SD5620/5630 Optoschmitt Detector FEATURES • TO-46 metal can package • 6¡ nominal acceptance angle • TTL/LSTTL/CMOS compatible • High noise immunity output • Buffer (SD5620) or inverting (SD5630) logic available • Two sensitivity ranges • Mechanically and spectrally matched to


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    PDF SD5620/5630 SD5620) SD5630) SE3450/5450, SE3455/5455 SE3470/5470 INFRA-81 SD5620/5630 metal detectors IC Single chip metal detector 5630 5630 metal detectors IC METAL DETECTOR circuit for make metal detector schematic SD5620 SD5630

    Untitled

    Abstract: No abstract text available
    Text: Interactive Catalog - Honeywell Sensing and Control HOME ABOUT US Speed, Position & Current INDUSTRIES Thermal Pressure, Force & Flow PRODUCTS & APPLICATIONS Relays Switches & Equipment Health NEWS & EVENTS Potentiometers & Resistors CONTACT & SUPPORT Safety


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    PDF SD5410-001 T0-46, SD5410 2D001

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


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    PDF 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    dual Phototransistor mouse

    Abstract: quadrature mouse phototransistor HLC2705 HLC2705-001 mouse Phototransistor SE5455-003 SE5470-004 hlc led MOUSE ENCODER output SE3455-003
    Text: 1739-2012:QuarkCatalogTempNew 9/17/12 4:46 PM Page 1739 20 Emitters and Sensors RoHS Metal Package ᭤ Temperature Range: –55°C to +125°C ᭤ Miniature, Hermetically Sealed, Metal Can Package SE2460-003, SE2470-002 ᭤ Ideal for High Pulsed Current Applications (SE3455-001,


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    PDF SE2460-003, SE2470-002) SE3455-001, SE5455-003, SE5470-004, SE3470-003) SE2470-002 dual Phototransistor mouse quadrature mouse phototransistor HLC2705 HLC2705-001 mouse Phototransistor SE5455-003 SE5470-004 hlc led MOUSE ENCODER output SE3455-003

    SD5421

    Abstract: SD3421 TO-46 transistor 5421 SD-3421
    Text: 17 September 1997 SD3421/5421 Silicon PIN Photodiode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 18¡ nominal acceptance angle option • Fast response time • Wide operating temperature range (-55¡C to +125¡C)


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    PDF SD3421/5421 SE3450/5450, SE3455/5455 SE3470/5470 INFRA-57 SD3421/5421 SD3421 SD5421 SD3421 TO-46 transistor 5421 SD-3421

    all datasheet phototransistor

    Abstract: Infrared Phototransistor mw 137 npn phototransistor TIP NPN SD5491 SE5470 phototransistor 302 302 phototransistor biconvex lens
    Text: 17 September 1997 SD5491 Silicon Phototransistor FEATURES • TO-18 metal can package • 12¡ nominal acceptance angle • Wide operating temperature range (-55¡C to +125¡C) • Fast response time • Wide sensitivity ranges • External base connection for added control


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    PDF SD5491 SE3450/5450, SE3455/5455 SE3470/5470 INFRA-70 SD5491 SE5470 all datasheet phototransistor Infrared Phototransistor mw 137 npn phototransistor TIP NPN SE5470 phototransistor 302 302 phototransistor biconvex lens

    diameter glass lens phototransistor

    Abstract: No abstract text available
    Text: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° ' nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents


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    PDF SE3470/5470 125aC) SD3421/5421 SD3443/5443/5491 SD3410/54 SD5600 SE3470/5470 SE3470 SE5470 SDP8406 diameter glass lens phototransistor

    Untitled

    Abstract: No abstract text available
    Text: SE3470/5470 AIGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option . 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range


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    PDF SE3470/5470 SD3421/5421 SD3443/5443/5491 SD3410/5410 SD5600 SE3470/5470 SE3470 SE5470 SD5443 MSS1830

    diode b32

    Abstract: b32 diode 101S b3-z a1ps
    Text: u t s 5 & # m j ,t » lí|l?ft: 5 1 S03J CÈ.Î5 : [ 7 5 5 -fl3 2 79 I 1B/B327BS 5 9 /3 3 2 7 BB6Ü fÉ J t; 0 7 6 3 -8 3 2 7 9 2 0 3 R IíIt S lilf fl ' S e n s o rO g p n I I o s z «vwvi i i p o I I o s ü . -com com SE3470/5470 AIGaAs Infrared Emitting Diode


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    PDF 0755-B3Z 1B/3327B659/332 51B033 SE3470/5470 8E34704OT BES4T040B SE647tHÂ SQ47MM 86547D 755-a diode b32 b32 diode 101S b3-z a1ps

    H0A1887

    Abstract: H0A2762 H0A0825 H0A1884 H0A1881 HLC2701 SE34705470 HOA1404 H0A69
    Text: Alphabetical Product Index R eference Page R eference Page R eference HLC1395 240 H0A2762 342 SE3455/5455 28 HLC2701 208 HOA2862 346 SE3470/5470 32 HLC2705 212 H0A696X/697X 376 SEP8505 36 HOA0149 228 H0A698X/699X 382 SEP8506 40 HOA0708/0709 232 H0A7720/7730


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    PDF HLC1395 HLC2701 HLC2705 HOA0149 HOA0708/0709 H0A0825 HOA086X/087X HOA088X/089X HOA0901 H0A09 H0A1887 H0A2762 H0A1884 H0A1881 SE34705470 HOA1404 H0A69

    SE5470

    Abstract: SE5470-003
    Text: SE3470/5470 AIGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package I • 90° or 20° nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents


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    PDF SE3470/5470 SD3421/5421 SD3443/5443/5491 SD3410/5410 SD5600 SE3470/5470 SE3470 SE5470 SD5443 SE5470-003

    Untitled

    Abstract: No abstract text available
    Text: SD3421/5421 Silicon PIN Photodiode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Fast response time • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to


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    PDF SD3421/5421 SE3450/5450, SE3455/5455 SE3470/5470 SD3421/5421 SD3421 SD5421 --I50

    Untitled

    Abstract: No abstract text available
    Text: b?E 1 • SD5304/5314 MSS1830 0011,754 bbb H H 0 N 1 H O NEY l il E LL INC/ MICRO Optoschmitt Detector Open-Collector Output_ FEATURES • TO-18 metal can package • 12° nominal acceptance angle . TTLVLSTTL/CM OS compatible • Open collector output


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    PDF MSS1830 SD5304/5314 SD5304) SD5314) SE3450/5450, SE3455/5455 SE3470/5470 SD5304/5314 U160140

    metal detector schematic

    Abstract: SD5604
    Text: b?E V m H551Ô30 001b7Sfi EOI «H O N 1 SD5604/5614 HONEYlilELL IN C / MICRO Optoschmitt Detector 10 kQ Pull-Up Output FEATURES • TO-18 metal can package • 12° nominal acceptance angle . TTL/LSTTL/CMOS compatible • 10 k£i pull-up output • Buffer (SD5604) or inverting (SD5614) logic


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    PDF 001b7Sfi SD5604/5614 SD5604) SD5614) SE3450/5450, SE3455/5455 SE3470/5470 SD5604/5614 14012U metal detector schematic SD5604

    SD5410

    Abstract: Lu 3410
    Text: SD3410/5410 Silicon Photodarlington FE A TU R ES . TO -46 m etal can package . Choice of flat w indow or lensed package . 90° or 12° nom inal acceptance angle option • W ide operating tem perature range • W ide sensitivity ranges • M echanically and spectrally m atched to


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    PDF SD3410/5410 E3450/5450, SE3470/5470 SD5410 Lu 3410

    Untitled

    Abstract: No abstract text available
    Text: SD5491 Silicon Phototransistor FEATURES • TO-18 metal can package • 12° nominal acceptance angle • Wide operating temperature range (-55°C to +125°C) . Fast response time • Wide sensitivity ranges • External base connection for added control


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    PDF SD5491 SE3450/5450, SE3455/5455 SE3470/5470 SD5491 QQ52S41

    Untitled

    Abstract: No abstract text available
    Text: SD3410/5410 Silicon Photodarlington FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° o r 12° nominal acceptance angle option • Wide operating temperature range (-55°C to+125°C ) • Wide sensitivity ranges • Mechanically and spectrally matched to


    OCR Scan
    PDF SD3410/5410 SE3450/5450, SE3455/5455 SE3470/5470 SD3410/5410 SD3410 SD5410 SD5410)