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    Samtec Inc ISDF-10-D

    CONN INSULATOR HSG 20POS 1.27MM
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    Samtec Inc ISDF-10-D-M

    CONN INSULATOR HSG 20POS 1.27MM
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    Samtec Inc TSDF-10-D-S-L

    CONN HSG 20POS 1.27MM
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    Samtec Inc ISDF-10-S-M

    CONN INSULATOR HSG 10POS 1.27MM
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    Samtec Inc TSDF-10-D-S

    CONN HSG 20POS 1.27MM
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    Master Electronics TSDF-10-D-S 940
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    SDF10 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF10 Diodes BRIDGE RECTIFIERS Scan PDF
    SDF10 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SDF1001 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SDF1001 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDF1001 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDF1002 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SDF1002 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDF1002 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDF1003 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SDF1003 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDF1003 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDF1004 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDF1004 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDF1005 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDF1005 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDF1006 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDF1006 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDF100NA40 Solitron Devices VDS (V) =, Id Continuous Tc=25C (A) = 100, Idm Pulsed (A) = 400, RDS (On) (Ohms) =... Scan PDF
    SDF100NA40HIU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF100NA40JDU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

    SDF10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SDF10P50EGX Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)175 Minimum Operating Temp (øC)


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    PDF SDF10P50EGX

    Untitled

    Abstract: No abstract text available
    Text: SDF100NA40JDZU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)100 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)400 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)833 Minimum Operating Temp (øC)-55


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    PDF SDF100NA40JDZU1N

    Untitled

    Abstract: No abstract text available
    Text: SDF100NA40JDEU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)100 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)400 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)833 Minimum Operating Temp (øC)-55


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    PDF SDF100NA40JDEU1N

    Untitled

    Abstract: No abstract text available
    Text: SDF100NA40JDWU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)100 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)400 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)833 Minimum Operating Temp (øC)-55


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    PDF SDF100NA40JDWU1N

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: [email protected] DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


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    PDF

    F10N60

    Abstract: No abstract text available
    Text: SDP/F10N60 Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS ID Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 600V 10A G D S 0.75 @ VGS=10V,ID=5A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )


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    PDF SDP/F10N60 O-220 O-220F SDP10N60 SDF10N60 O-220/220F F10N60

    2N4447

    Abstract: 2N4446 2N4445 2N4448 2N5432 2N5433 2N5434 SDF1001 SDF1002 SDF1003
    Text: Igss *BVDgo Vgs Vgs Case Ciss Crss Idss Idss or R on or (off) (off) Type Style Geometry Max Max Min Max *Idgo Max BVgss Min Max Number (pF) (pF) (v) (v) Max (ohms) (TO) Min (V) (V) (V) (nA) 2N4445 46 FN9.1/FN9 25 35 20 2.0 10.0 150 3.0 5.0 2N4446 46 FN9.1/FN9


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    PDF 2N4445 2N4446 2N4447 2N4448 2N5432 2N5433 2N5434 SDF1001 SDF1002 SDF1003 SDF1001 SDF1002 SDF1003

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    Untitled

    Abstract: No abstract text available
    Text: Green Product SDP F 10N06 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 600V 10A 0.68 @ VGS=10V Rugged and reliable.


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    PDF 10N06 O-220 O-220F O-220F O-220 SDP10N06 SDF10N06

    DEM 22 MSDS

    Abstract: TGS 823 XPRO 6502 microprocessor
    Text: ModelGen Version 4.3 User Guide Copyright 1999-2001. All rights reserved. ARM DUI 0050F ModelGen User Guide Copyright © 1999-2001. All rights reserved. Release Information Change history Date Issue Change 29 February 2000 C New version created 5 June 2000


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    PDF 0050F DEM 22 MSDS TGS 823 XPRO 6502 microprocessor

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    2n4391, Voltage controlled

    Abstract: sw 2n4093 2N5906
    Text: -Ælitran Devices. Inc. knot? ¥ ©[i[L[i©¥ tFcnr© ^©[D yj(gir ©attæmkqx IN TRO D U CTIO N TO TH E F E T S SDF1001 thru 1006 FOR SWITCHING In most switching applications it is d esirable to have a high O N -O FF-ratio. It is also desirable to b e ab le to switch both


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    PDF SDF1001 2N4391 2N4393 2N4861 2N5S92 2N4119 2N5906 2NS432 2N5433 2NS397-2N 2n4391, Voltage controlled sw 2n4093

    PBP205

    Abstract: GBPC602 GBPC802 W04 SMD KBP153 MB-104 RD154 PBP152 DB-102M GBPC810
    Text: BRIDGE CROSS REFERENCE GEN. INST. DIODES INC LITE ON RECTRON DB101GM DB102GM DB103GM DB104GM DB105GM DB106GM DB107GM DF005S DF01S DF02S DF04S DF06S DF08S DF01S SDF005 SDF01 SDF02 SDF04 SDF06 SDF08 SDF10 PBDF101S PBDF102S PBDF103S PBDF104S PBDF105S PBDF106S


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    PDF DF005S DF01S DF02S DF04S DF06S DF08S DF005M DF01M DF02M PBP205 GBPC602 GBPC802 W04 SMD KBP153 MB-104 RD154 PBP152 DB-102M GBPC810

    250M

    Abstract: 93A50
    Text: Æ titron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 1000V, 10A, SDF10N100 SDF10N100 SDF10N100 SDF10N100 ABSOLUTE MAXIMUM RATINGS PARAMETER s -I.O M o UNITS SYMBOL Drain-source Volt. l) Drain-Gate Voltage (Rg (1) Gate-Source Voltage Con t inuous


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    PDF MIL-S-19500 300hS, 250M 93A50

    Untitled

    Abstract: No abstract text available
    Text: Æi\tron PRODUCT DEVICES.INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH. FLORIDA 33404 TEL: 407 848-4311 • TLX: 51-3435 • FAX: (407) 863-S94S N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER (Rgs=1.0Mo ) (1) Gate-Source Voltage Con ti nuous


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    PDF 863-S94S

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    SDF10N90

    Abstract: No abstract text available
    Text: Æwtron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET ASSOLUTE MAXIMUM RATINGS PARAMETER D r a in - s o u r c e 9 0 0 V, S YM BO L V o lt . l D r a in - G a t e Vo I ta g e ( R Gs = 1 .0 M n ) ( 1 ) G a te - S o u r c e V o lt a g e C o n t in u o u s


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    PDF 300nS, SDF10N90 MIL-S-19500

    SDF100NA40

    Abstract: RD75 200V 50A mos fet
    Text: Æutron PRODUCT DEVI C E S . I N C . N-CHANNEL ENHANCEMENT MOS FET 400V, ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER DRAIN-SOURCE VOLTAGE DRAIN-GATE VOLTAGE R GS= 1 •°Mo GATE-SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT CONTINUOUS (T c = 25 * C) U N IT S VDSS


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    PDF 1100NA40 SDF100NA40 MIL-STD-883 300ks. RD75 200V 50A mos fet

    IN5314

    Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
    Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)


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    PDF UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297

    U1898E

    Abstract: 2n4447 UC251
    Text: ra@ iyj Tr ©ätäcl © LOW P O W E R FIELD E FFE C T T R A N S IS T O R S WO¥©D» 10 M=©CMG*L FUT? •BVDgo or BVgss Min (V Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) Idss Min Max (mA) Igss or •Idgo Max (nA) R(on) Max (ohms) III Typ* Number


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    PDF KK4857 KK4858 KK4859 KK4860 KK4861 U1897E U1898E U1899E UC100 UC105 2n4447 UC251

    2NB906

    Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
    Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style


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    PDF UC4250» UC4250C» MIL-STD-883C, 2N2609 2N3821 2N3822 2N3823 2N4856 2N4857 2N48S8 2NB906 IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92

    Untitled

    Abstract: No abstract text available
    Text: =ÆntrOn n rv i FS m e _ P R O D U C T C À T Â L Q Q n - c h a n n e l enhancem ent mos f e t 600V, A B S O L U T E MAXIMUM R A T IN G S PARAMETER UNITS SYMBOL D r a i n - s o u r c e Vo 1 t . 1 D r a i n - Ga t e Vo 1t age ( R gs = 1•OMn) ( 1 )


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    PDF SDF10N60 SDF10N60 IF-10

    Untitled

    Abstract: No abstract text available
    Text: Æ ntron _ frqduct N-CHANNEL ENHANCEMENT MOS FET 900V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D r a in - s o u r c e V o l t . l D ra in - G a te V o lta g e (R o s M .O M n ) (1) G a te -S o u rc e V o lta g e Cont inuous D ra in C u rre n t C o n tin u o u s


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    PDF SDF10N90

    TIS88A equivalent

    Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
    Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.


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    PDF 20x40 111x109 TIS88A equivalent 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent