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    SBR52 Search Results

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    SBR52 Price and Stock

    Amphenol Corporation 5024W7SBR52E20X

    D-Sub Mixed Contact Connectors 24W7 F PC TAIL 40A POWER 4-40 R.SPCR/CLIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 5024W7SBR52E20X
    • 1 $35.79
    • 10 $31.35
    • 100 $28.05
    • 1000 $26.51
    • 10000 $26.51
    Get Quote

    Conec Corporation 5024W7SBR52E20X

    24W7 F PC TAIL 40A POWER 4-40
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Interstate Connecting Components 5024W7SBR52E20X
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    OMRON Electronic Components LLC 3S4YR-SBR5-20

    Manual Insert Magnetic Card Reader
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics 3S4YR-SBR5-20 149
    • 1 $111.12
    • 10 $84.55
    • 100 $84.55
    • 1000 $84.55
    • 10000 $84.55
    Buy Now

    SBR52 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SBR52 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    SBR520 Daesan Electronics CURRENT 5.0 AMPERES VOLTAGE 20 TO 100 VOLTS Original PDF

    SBR52 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SBR56

    Abstract: SBR520
    Text: E L E C T R O N I C SBR54 ~ SBR520 Power Schottky Rectifier - 5Amp 40~200Volt □ Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency


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    SBR54 SBR520 200Volt MIL-STD-750 SBR54 SBR56 SBR520 PDF

    SBR56

    Abstract: No abstract text available
    Text: E L E C T R O N I C SBR52~SBR56 Schottky Rectifier - 5Amp 20~60Volt □ Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency -High current capability, low forward voltage drop


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    SBR52 SBR56 60Volt SBR56 PDF

    SBR5100

    Abstract: 20KHZ SBR520 SBR560 SBR590
    Text: CURRENT 5.0Amperes VOLTAGE 20 to 100 Volts SBR520 THRU SBR5100 Features • Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 · Metal silicon junction, majority carrier conduction · Guard ring for overvoltage protection · Low power loss, high efficiency


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    SBR520 SBR5100 ITO-220A 13Min ITO-220A SBR560 SBR590 300us SBR5100 20KHZ PDF

    NT5TU128M8DE

    Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
    Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6


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    NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TB256M4DE NT5TB128M8DE NT5TB64M16DG -37B/-37BI DDR2-533 DDR2-667 DDR2-800 NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE PDF

    nt5tu128m8de-ac

    Abstract: NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG
    Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG 1Gb DDR2 SDRAM Preliminary Edition Features CAS Latency and Frequency Speed Sorts -37B DDR2 -533 -3C DDR2 -667 -AD DDR2 -800 -AC DDR2 -800 Units Bin CL-tRCD-TRP 4-4-4 5-5-5 6-6-6 5-5-5 tck max. Clock Frequency 266


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    NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG nt5tu128m8de-ac NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG PDF

    NT5TU32M16AG-37B

    Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
    Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8


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    NT5TU128M4AB/NT5TU128M4AE NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE NT5TU32M16AF/NT5TU32M16AG /NT5TU32M16AS 512Mb NT5TU32M16AG-37B NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af PDF

    NT5TU32M16CG-BD

    Abstract: NT5TU32M16CG-be NT5TU64M8CE
    Text: NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3,4,5,6 and 7 • 4 internal memory banks • Programmable Additive Latency: 0, 1, 2, 3, and 4


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    NT5TU128M4CE NT5TU64M8CE /NT5TU32M16CG 512Mb NT5TU32M16CG-BD NT5TU32M16CG-be PDF

    400B

    Abstract: DDR2-400 DDR2-533 DDR667 HYB18T512 HYB18T512160AF HYB18T512400AF HYB18T512800AF HYB18T512400AF5
    Text: D a t a S he et , Rev. 1.3, J a n. 2 00 5 HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Products M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2005-01 Published by Infineon Technologies AG,


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    HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit 09112003-SDM9-IQ3P 400B DDR2-400 DDR2-533 DDR667 HYB18T512 HYB18T512160AF HYB18T512400AF HYB18T512800AF HYB18T512400AF5 PDF

    NT5TU256T8DY

    Abstract: 128 MB DDR2 SDRAM DDR2-667 DDR2-800 NT5TU256T8DY-3C
    Text: NT5TU512T4DY / NT5TU256T8DY 2Gb DDR2 SDRAM DDP Features • Programmable Additive Latency: 0, 1, 2, 3 and 4 CAS Latency and Frequency Speed Sorts DDR2-667 DDR2-800 DDR2-800 (-3C) (-AC) (-AD) Bin • Write Latency = Read Latency -1 Units • Programmable Burst Length: 4 and 8


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    NT5TU512T4DY NT5TU256T8DY DDR2-667 DDR2-800 DDR2-800 NT5TU256T8DY 128 MB DDR2 SDRAM NT5TU256T8DY-3C PDF

    NT5TU64M16

    Abstract: NT5TU128M8BJ-3C NT5TU64M16BM nt5tu64m NT5TU128M8 128 MB DDR2 SDRAM 1GB DDR2 4 banks NT5TU256M4BJ
    Text: NT5TU256M4BJ / NT5TU128M8BJ / NT5TU64M16BM Green 1Gb DDR2 SDRAM Features CAS Latency and Frequency Speed Sorts -5A DDR2 -400 -37B DDR2 -533 -3C DDR2 -667 -25D DDR2 -800 Units Bin (CL-tRCD-TRP) 3-3-3 4-4-4 5-5-5 6-6-6 tck max. Clock Frequency 200 266 333 400


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    NT5TU256M4BJ NT5TU128M8BJ NT5TU64M16BM NT5TU64M16 NT5TU128M8BJ-3C nt5tu64m NT5TU128M8 128 MB DDR2 SDRAM 1GB DDR2 4 banks PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


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    V59C1G01 32Mbit 16Mbit DDR2-667 DDR2-800 DDR2-1066 875ns PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 QA HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns


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    V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns


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    V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: V59C1512 404/804/164 QC HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


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    V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz PDF

    9.1 b3

    Abstract: No abstract text available
    Text: V59C1256 404/804/164 QA*I HIGH PERFORMANCE 256Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) PRELIMINARY 37 3 25 DDR2-533 DDR2-667 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4)


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    V59C1256 256Mbit 16Mbit DDR2-533 DDR2-667 DDR2-800 400MHz 9.1 b3 PDF

    9.1 b3

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1256 404/804/164 QA HIGH PERFORMANCE 256Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 37 3 25A 25 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


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    V59C1256 256Mbit 16Mbit DDR2-533 DDR2-667 DDR2-800 9.1 b3 PDF

    Untitled

    Abstract: No abstract text available
    Text: V59C1512 404/804/164 QC*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


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    V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz PDF

    DDR2-400

    Abstract: DDR2-533 DDR2-667 HYB18T1G160AF HYB18T1G400AF HYB18T1G800AF "content addressable memory" power match precharge
    Text: D a t a S he et , V 1. 0 2 , M a y 2 0 0 4 H Y B 1 8 T 1 G 4 00 A F H Y B 1 8 T 1 G 8 00 A F H Y B 1 8 T 1 G 1 60 A F 1 G b i t D D R 2 S D R AM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2004-05-03 Published by Infineon Technologies AG,


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    DDR2-667 DDR2-400 DDR2-533 DDR2-667 HYB18T1G160AF HYB18T1G400AF HYB18T1G800AF "content addressable memory" power match precharge PDF

    HYB18T256160AF

    Abstract: HYB18T256400AF HYB18T256800AF 09112003-LZPT-I17F
    Text: D a t a S h e e t , Rev. 1.1, S e p . 2 0 0 4 HYB18T256400AF HYB18T256800AF HYB18T256160AF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Memory Products N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice.


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    HYB18T256400AF HYB18T256800AF HYB18T256160AF 256-Mbit DDR2-533 DDR2-400 09112003-LZPT-I17F HYB18T256160AF HYB18T256400AF HYB18T256800AF 09112003-LZPT-I17F PDF

    Untitled

    Abstract: No abstract text available
    Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) NT5TU32M16AF/NT5TU32M16AG(Green) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8 Speed Sorts -5 DDR2


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    NT5TU128M4AB/NT5TU128M4AE NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE NT5TU32M16AF/NT5TU32M16AG 512Mb PDF

    Untitled

    Abstract: No abstract text available
    Text: NT5TU16M16AG 256Mb DDR2 SDRAM Features • Programmable Additive Latency: 0, 1, 2, 3, and 4 CAS Latency and Frequency • Write Latency = Read Latency -1 Speed Sorts -37B DDR2 -533 -3C DDR2 -667 -25D DDR2 -800 Units Bin CL-tRCD-TRP 4-4-4 5-5-5 6-6-6 tck


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    NT5TU16M16AG 256Mb PDF

    NT5TU128M8

    Abstract: NT5TU128M8HE-AC
    Text: 1Gb DDR2 SDRAM H-Die DDR2 1Gb SDRAM Preliminary NT5TU128M8HE / NT5TU64M16HG Specifications and functions are not finalized!! Commercial, Industrial and Automotive DDR2 1Gb SDRAM Features  JEDEC DDR2 Compliant  Data Integrity - Auto Refresh and Self Refresh Modes


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    NT5TU128M8HE NT5TU64M16HG JESD208 JESD79-F) NT5TU128M8 NT5TU128M8HE-AC PDF

    NT5TU64M16CG

    Abstract: NT5TU64M16CG-25C
    Text: NT5TU256M4CE / NT5TU128M8CE / NT5TU64M16CG 1Gb DDR2 SDRAM Preliminary Edition Features CAS Latency and Frequency Speed Sorts -37B DDR2 -533 -3C DDR2 -667 -25D DDR2 -800 -25C DDR2 -800 Units Bin CL-tRCD-TRP 4-4-4 5-5-5 6-6-6 5-5-5 tck max. Clock Frequency


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    NT5TU256M4CE NT5TU128M8CE NT5TU64M16CG NT5TU64M16CG NT5TU64M16CG-25C PDF

    NTC 2.5D -15

    Abstract: NT5TU32M16BG
    Text: NT5TU128M4BE NT5TU64M8BE NT5TU32M16BG 512Mb DDR2 SDRAM B-Die Features 2k page size for x16 • 1.8V ± 0.1V Power Supply Voltage • 4 internal memory banks • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3, 4, 5 and 6 • Strong and Weak Strength Data-Output Driver


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    NT5TU128M4BE NT5TU64M8BE NT5TU32M16BG 512Mb NTC 2.5D -15 NT5TU32M16BG PDF