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    RN2116F Search Results

    RN2116F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN2116F Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) Original PDF
    RN2116FT Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) Original PDF
    RN2116FV Toshiba Silicon PNP Epitaxial Transistor with Resistors Original PDF

    RN2116F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RN2114FT~RN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design


    Original
    PDF RN2114FTâ RN2118FT RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN1114FT RN1118FT RN2114FT

    Untitled

    Abstract: No abstract text available
    Text: RN2114FV~RN2118FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FV,RN2115FV,RN2116FV ,RN2117FV,RN2118FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 0.22±0.05 Unit: mm 0.32±0.05 With built-in bias resistors


    Original
    PDF RN2114FVâ RN2118FV RN2114FV RN2115FV RN2116FV RN2117FV RN2114FV

    Untitled

    Abstract: No abstract text available
    Text: RN2114F~RN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z z z z Unit: mm With built-in bias resistors Simplify circuit design


    Original
    PDF RN2114FRN2118F RN2114F RN2115F RN2116F RN2117F RN2118F RN1114F RN1118F

    Untitled

    Abstract: No abstract text available
    Text: RN2114FT~RN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design


    Original
    PDF RN2114FTRN2118FT RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT RN1114FT RN1118FT RN2114FT RN2115FT

    RN1114F

    Abstract: RN1118F RN2114F RN2115F RN2116F RN2117F RN2118F
    Text: RN2114F~RN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design


    Original
    PDF RN2114FRN2118F RN2114F RN2115F RN2116F RN2117F RN2118F RN1114F RN1118F RN2114F RN2115F RN1118F RN2118F

    RN2114FV

    Abstract: RN2115FV RN2116FV RN2117FV RN2118FV
    Text: RN2114FV~RN2118FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FV,RN2115FV,RN2116FV RN2117FV,RN2118FV Unit: mm 0.22±0.05 1.2±0.05 0.32±0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.8±0.05 Complementary to RN2114FV~RN2118FV


    Original
    PDF RN2114FVRN2118FV RN2114FV RN2115FV RN2116FV RN2117FV RN2118FV RN2114FV RN2115FV RN2116FV RN2118FV

    RN1114F

    Abstract: RN1118F RN2114F RN2115F RN2116F RN2117F RN2118F
    Text: RN2114FRN2118F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2114F,RN2115F,RN2116F,RN2117F,RN2118F ○ スイッチング用 ○ インバータ用 ○ インタフェース回路用 ○ ドライバ回路用


    Original
    PDF RN2114FRN2118F RN2114F RN2115F RN2116F RN2117F RN2118F RN1114FRN1118F RN2114F RN2115F RN2117F RN1114F RN1118F RN2118F

    RN1114FT

    Abstract: RN1118FT RN2114FT RN2115FT RN2116FT RN2117FT RN2118FT
    Text: RN2114FT~RN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z Unit: mm Built-in bias resistors Enabling simplified circuit design


    Original
    PDF RN2114FTRN2118FT RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT RN1114FT RN1118FT RN2114FT RN2115FT RN1118FT RN2114FT RN2115FT RN2116FT RN2117FT RN2118FT

    Untitled

    Abstract: No abstract text available
    Text: RN2114F~RN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design


    Original
    PDF RN2114Fâ RN2118F RN2114F RN2115F RN2116F RN2117F RN1114F RN1118F RN2114F

    RN1114FT

    Abstract: RN1118FT RN2114FT RN2115FT RN2116FT RN2117FT RN2118FT
    Text: RN2114FT~RN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design


    Original
    PDF RN2114FTRN2118FT RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT RN1114FT RN1118FT RN2114FT RN2115FT RN1118FT RN2114FT RN2115FT RN2116FT RN2117FT RN2118FT

    Untitled

    Abstract: No abstract text available
    Text: RN2114FT~RN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z Unit: mm


    Original
    PDF RN2114FTâ RN2118FT RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN1114FT RN1118FT RN2114FT

    Untitled

    Abstract: No abstract text available
    Text: RN2114FT~RN2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z Unit: mm Built-in bias resistors Enabling simplified circuit design


    Original
    PDF RN2114FTRN2118FT RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT RN1114FT RN1118FT RN2114FT RN2115FT

    RN1114FT

    Abstract: RN1118FT RN2114FT RN2115FT RN2116FT RN2117FT RN2118FT r22f
    Text: RN2114FTRN2118FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2114FT,RN2115FT,RN2116FT,RN2117FT,RN2118FT ○ スイッチング用 ○ インバータ用 ○ インタフェース回路用 ○ ドライバ回路用


    Original
    PDF RN2114FTRN2118FT RN2114FT RN2115FT RN2116FT RN2117FT RN2118FT RN1114FTRN1118FT RN2114FT RN2115FT RN2116FT RN1114FT RN1118FT RN2118FT r22f

    RN1114F

    Abstract: RN1118F RN2114F RN2115F RN2116F RN2117F RN2118F
    Text: RN2114F~RN2118F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114F,RN2115F,RN2116F,RN2117F,RN2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z z z z Unit: mm With built-in bias resistors Simplify circuit design


    Original
    PDF RN2114FRN2118F RN2114F RN2115F RN2116F RN2117F RN2118F RN1114F RN1118F RN2114F RN2115F RN1118F RN2118F

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original
    PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original
    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    Untitled

    Abstract: No abstract text available
    Text: RN47A5 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A5 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Unit: mm Two devices are incorporated into an Ultra-Super-Mini (5 pin)


    Original
    PDF RN47A5 RN1104F RN2116F

    Untitled

    Abstract: No abstract text available
    Text: RN47A5 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process Silicon PNP Epitaxial Type (PCT process) RN47A5 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Including two devices in USV (ultra super mini type with 5 leads)


    Original
    PDF RN47A5 RN1104F RN2116F 961001EAA1

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original
    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original
    PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original
    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    toshiba YK smd marking

    Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
    Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


    Original
    PDF 050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV

    2P1E

    Abstract: RN1104F RN2116F RN47A5JE
    Text: RN47A5JE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN47A5JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (5 pin)


    Original
    PDF RN47A5JE 2P1E RN1104F RN2116F RN47A5JE

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original
    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B