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    RJK6032DPD-E0#J2 Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation

    RJK6032DPD Datasheets (1)

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    RJK6032DPD-00#J2 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3A MP3A Original PDF

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    RJK6032DPD

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6032DPD 600V - 3A - MOS FET High Speed Power Switching R07DS0837EJ0200 Rev.2.00 Aug 06, 2012 Features • Low on-resistance RDS on = 3.3  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting


    Original     		PDF RJK6032DPD R07DS0837EJ0200 PRSS0004ZG-A RJK6032DPD

    RJK6032DPD

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6032DPD 600V - 3A - MOS FET High Speed Power Switching R07DS0837EJ0300 Rev.3.00 Oct 05, 2012 Features • Low on-resistance RDS on = 3.3  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting


    Original     		PDF RJK6032DPD R07DS0837EJ0300 PRSS0004ZG-A RJK6032DPD