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onsemi RFP30P05 MOSFET P-CH 50V 30A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RFP30P05	Tube			800	1 - 10 - 100 - 1000 $1.14068 10000 $1.14068	Buy Now
onsemi RFP30P06 MOSFET P-CH 60V 30A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RFP30P06	Tube			800	1 - 10 - 100 - 1000 $0.93256 10000 $0.93256	Buy Now
Harris Semiconductor RFP30P05
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Bristol Electronics	RFP30P05		151			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	RFP30P05		55			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	RFP30P05		120			1 $11.97 10 $11.97 100 $9.842 1000 $9.31 10000 $9.31	Buy Now
Fairchild Semiconductor Corporation RFP30P06
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Bristol Electronics	RFP30P06		23			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	RFP30P06		57			1 $11.94 10 $7.96 100 $7.363 1000 $7.363 10000 $7.363	Buy Now
	RFP30P06		18			1 $10.11 10 $7.414 100 $6.74 1000 $6.74 10000 $6.74	Buy Now
Intersil Corporation RFP30P06 TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,30A I(D),TO-220AB
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Quest Components	RFP30P06		89			1 $14.7 10 $14.7 100 $6.37 1000 $6.37 10000 $6.37	Buy Now

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RFP30P Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
RFP30P05	Fairchild Semiconductor	30A, 50V, 0.065 Ohm, P-Channel Power MOSFET	Original	PDF
RFP30P05	Harris Semiconductor	30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs	Original	PDF
RFP30P05	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
RFP30P05	Intersil	30A, 50V, 0.065 ?, P-Channel Power MOSFETs	Original	PDF
RFP30P05	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
RFP30P05	Intersil	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, 50V, 30A, Pkg Style TO-220AB	Scan	PDF
RFP30P05	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
RFP30P05	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
RFP30P06	Fairchild Semiconductor	30A, 60V, 0.065 Ohm, P-Channel Power MOSFET	Original	PDF
RFP30P06	Harris Semiconductor	30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs	Original	PDF
RFP30P06	Intersil	30A, 60V, 0.065 ?, P-Channel Power MOSFETs	Original	PDF
RFP30P06	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
RFP30P06	Intersil	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P Channel, 60V, 30A, TO220AB	Scan	PDF
RFP30P06	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

RFP30P06	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

RFP30P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
f1s30p05 Abstract: RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334 Text: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 50V Formerly developmental type TA09834. Ordering Information PACKAGE 2436.4 Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses	Original	PDF	RFG30P05, RFP30P05, RF1S30P05SM TA09834. f1s30p05 RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334
F1S30P05 Abstract: RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334 Text: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives	Original	PDF	RFG30P05, RFP30P05, RF1S30P05SM TA09834. F1S30P05 RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334
F1S30P06 Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334 Text: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM	Original	PDF	RFG30 RFP30P RF1S30 P06SM) O220AB, O262AA, O263AB) RFG30P06, RFP30P06, F1S30P06 RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334
F1S30P06 Abstract: F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 60V Formerly developmental type TA09834. Ordering Information PACKAGE TO-247 RFG30P06 RFP30P06 TO-220AB RFP30P06 RF1S30P06SM TO-263AB F1S30P06 • rDS ON = 0.065Ω	Original	PDF	RFG30P06, RFP30P06, RF1S30P06SM TA09834. O-247 O-220AB O-263AB 175oC TB334 RFP30P06 F1S30P06 F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P
F1S30P06 Abstract: RFP30P06 RF1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 299E-3 Text: RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 60V rDS ON = 0.065Ω Temperature Compensating PSPICE Model	Original	PDF	RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM O-247 175oC F1S30P06 RFP30P06 RF1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 299E-3
RFP30P06 Abstract: R*P30P06 F1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 TB334 Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum	Original	PDF	RFG30P06, RFP30P06, RF1S30P06SM TA09834. O-247 O-220AB O-263AB 175oC RFP30P06 R*P30P06 F1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 TB334
Untitled Abstract: No abstract text available Text: RFP30P06 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)30# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)75# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)135# Minimum Operating Temp (øC)-55õ	Original	PDF	RFP30P06
RFP30P06 Abstract: No abstract text available Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet Title FG3 06, P30 6, 1S3 06S bt A, V, 65 m, anwer OSTs utho eyrds ter- July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature	Original	PDF	RFG30P06, RFP30P06, RF1S30P06SM TA09834. RFP30P06
f1s30p05 Abstract: RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM S E M I C O N D U C T O R 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 50V rDS ON = 0.065Ω Temperature Compensating PSPICE Model	Original	PDF	RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM O-247 175oC f1s30p05 RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris
RFP30P Abstract: No abstract text available Text: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs [ /Title RFG3 0P05, RFP30 P05, RF1S3 0P05S M /Subject (30A, 50V, 0.065 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power	Original	PDF	RFG30P05, RFP30P05, RF1S30P05SM RFP30 0P05S O220AB RFP30P
Untitled Abstract: No abstract text available Text: RFP30P05 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)30# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)75# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)120# Minimum Operating Temp (øC)-55õ	Original	PDF	RFP30P05
Complementary MOSFETs buz11 Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110 Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
FDC6331 Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305 Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3	Original	PDF	2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
TCA780 Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP	Original	PDF	1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

RFD14N05 spice Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S Text: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance	Original	PDF	HRF3205 HRF3205S HRFZ44N HUF75229P3 HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S RFD14N05 spice HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
Untitled Abstract: No abstract text available Text: P *3 3 S RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum	OCR Scan	PDF	RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM 0-065i2 81e-8) 23e-1 97e-3 37e-5) 78e-9
F1S30P05 Abstract: No abstract text available Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model	OCR Scan	PDF	RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0651J RF1S30P05SM F1S30P05
Untitled Abstract: No abstract text available Text: P *3 3 S RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI circuits, gives optimum	OCR Scan	PDF	RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0-065i2 Operati85e-9 81e-8) 23e-1 97e-3 37e-5)
30P06 Abstract: No abstract text available Text: RFG 30P06 RFP30P06 ¡2 H a r r i s P-Channe! Enhancement Mode Power Field Effect Transistors MegaFETs August 1991 Features Packages • -3 0 A , -6 0 V • rD S(on) = 0 .0 7 5 C l • UIS S O A Rating Curve (Single Pulse) • SO A is P o w er-D issip atio n Lim ited	OCR Scan	PDF	30P06 RFP30P06 FP30P06 RFG30P06,
F1S30P06 Abstract: 30p06 Text: RFG30P06, RFP30P06, r f 1 S30P06, RF1S30P06SM HARRIS S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features Packages JEDEC STYLE TO-247 • 3 0A , 60V • rDS ON = 0-06512 • T e m p e ra tu re C o m p e n s atin g P S P IC E M odel	OCR Scan	PDF	RFG30P06, RFP30P06, S30P06, RF1S30P06SM O-247 P06SM 81e-8) 23e-1 97e-3 37e-5) F1S30P06 30p06
RFP30P06 Abstract: No abstract text available Text: interrii RFG30P06, RFP30P06, RF1S30P06SM D a ta S h e e t J u ly 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs F ile N u m b e r 2 4 3 7 .3 Features • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature	OCR Scan	PDF	RFG30P06, RFP30P06, RF1S30P06SM TA09834. RF1S30P06SM AN7254 AN7260. RFP30P06
Untitled Abstract: No abstract text available Text: mtefsil RFG30P05, RFP30P05, RF1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives	OCR Scan	PDF	RFG30P05, RFP30P05, RF1S30P05SM TA09834. RFG30P0S, RF1S30P05SM AN7260.
Untitled Abstract: No abstract text available Text: T T \ IP IFA D L T C 1 1 4 9 - 3 , / L tS ^ TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators KflTU IK S DCSCRIPTIOn • Operation to 48V Input Voltage ■ Ultra High Efficiency: Up to 95% ■ Current-Mode Operation for Excellent Line and Load	OCR Scan	PDF	16-Pin LTC1149 16-Lead
80-DF Abstract: 100MF 35v lt1149 Text: uTECHNOLOGY i m ^ L T C IM LTC1149- TCI 149-5 High Efficiency Synchronous Step-Down Switching Regulators FCOTUfteS A DCSCRIPTIOn • Operation to 48V Input Voltage ■ Ultra High Efficiency: Up to 95% ■ Current-Mode Operation for Excellent Line and Load	OCR Scan	PDF	LTC1149- LTC1149 250kHz 80-DF 100MF 35v lt1149

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RFP30P Price and Stock

onsemi RFP30P05

onsemi RFP30P06

Harris Semiconductor RFP30P05

Fairchild Semiconductor Corporation RFP30P06

Intersil Corporation RFP30P06

RFP30P Datasheets (15)

RFP30P Datasheets Context Search

f1s30p05

F1S30P05

F1S30P06

F1S30P06

F1S30P06

RFP30P06

Untitled

RFP30P06

f1s30p05

RFP30P

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Complementary MOSFETs buz11

FDC6331

TCA780

RFD14N05 spice

Untitled

F1S30P05

Untitled

30P06

F1S30P06

RFP30P06

Untitled

Untitled

80-DF