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    Essentra Components RFG-60

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    MOSFET P-CH 50V 60A TO247-3
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    FLEXIBLE SILICONE RUBBER FIBERGLASS INSULATED HEATERS - Bulk (Alt: SRFG-608/2-230V)
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    Hubbell Wiring Device-Kellems RFG60PK5

    Ps, iec, 60A 5W Replc Flange Gasket 5 Pk |Hubbell Wiring Devices RFG60PK5
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    Hubbell Premise Wiring RFG60PK5

    PS, IEC, 60A 5W REPLC FLANGE GASKET 5 PK | Hubbell Wiring Device-Kellems RFG60PK5
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    RFG60 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFG60P03 Fairchild Semiconductor 60A, 30V, 0.027 Ohm, P-Channel Power MOSFET Original PDF
    RFG60P03 Fairchild Semiconductor 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFG60P03 Intersil 60A, 30V, 0.027 ?, P-Channel Power MOSFETs Features Original PDF
    RFG60P03 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFG60P05E Fairchild Semiconductor 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Original PDF
    RFG60P05E Fairchild Semiconductor 60A, 50V, 0.030 ?, ESD Rated, P-Channel Power MO Original PDF
    RFG60P05E Harris Semiconductor 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET Original PDF
    RFG60P05E Intersil 60A, 50V, 0.030 ?, ESD Rated, P-Channel Power MOSFET Original PDF
    RFG60P05E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFG60P05E Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P Channel, 60V, 60A, Pkg Style TO247 Scan PDF
    RFG60P05E Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFG60P05E Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFG60P06E Fairchild Semiconductor 60A, 60V, 0.030 ?, ESD Rated, P-Channel Power MO Original PDF
    RFG60P06E Harris Semiconductor 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET Original PDF
    RFG60P06E Intersil 60A, 60V, 0.030 ?, ESD Rated, P-Channel Power MOSFET Original PDF
    RFG60P06E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFG60P06E Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - PWR MOS 60V/60A/0.030 OHM P-CH ESD RATED Scan PDF
    RFG60P06E Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFG60P06E Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RFG60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    50V 60A MOSFET

    Abstract: RFG60P05E 124E-12
    Text: RFG60P05E S E M I C O N D U C T O R 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 60A, 50V JEDEC STYLE TO-247 • rDS ON = 0.030Ω SOURCE DRAIN GATE • Temperature Compensating PSPICE Model


    Original     		RFG60P05E O-247 175oC RFG60P05E 15e-10 1e-30 42e-4 85e-3 69e-6) 50V 60A MOSFET 124E-12 PDF

    RFP60P03

    Abstract: RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334
    Text: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet January 2002 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		RFG60P03, RFP60P03, RF1S60P03SM TA49045. RFP60P03 RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334 PDF

    RFP60P03

    Abstract: RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334 IS421
    Text: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet July 1999 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs • 60A, 30V Formerly developmental type TA49045. Ordering Information PACKAGE 3951.3 Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		RFG60P03, RFP60P03, RF1S60P03SM TA49045. RFP60P03 RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334 IS421 PDF

    F1S60P03

    Abstract: RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 RS-380
    Text: RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.027Ω • Temperature Compensating PSPICE Model


    Original     		RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM O-247 175oC RF1S60P03 RF1S60P03SM F1S60P03 RF1S60P03 RFG60P03 RFP60P03 RS-380 PDF

    rfg60p06

    Abstract: No abstract text available
    Text: RFG60P06E Data Sheet July 1999 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET eyrds ter- PART NUMBER RFG60P06E PACKAGE TO-247 3989.3 Features • 60A, 60V Title The RFG60P06E P-Channel power MOSFET is FG6 manufactured using the MegaFET process. This process,


    Original     		RFG60P06E RFG60P06E TA09836. rfg60p06 PDF

    40V 60A MOSFET

    Abstract: RFG60P05E TB334
    Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P05E TO-247 • 60A, 50V • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		RFG60P05E O-247 175oC TB334 40V 60A MOSFET RFG60P05E TB334 PDF

    RFG60P05E

    Abstract: TB334
    Text: RFG60P05E Data Sheet January 2002 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 50V This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization


    Original     		RFG60P05E TA09835. O-247 175oC RFG60P05E TB334 PDF

    RFG60P06E

    Abstract: No abstract text available
    Text: RFG60P06E S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET January 1996 Features Package • 60A, 60V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model


    Original     		RFG60P06E O-247 175oC RFG60P06E 11e-1 34e-3 46e-12) 15e-10 1e-30 PDF

    P-CHANNEL 45A TO-247 POWER MOSFET

    Abstract: RFG60P06E rfg60p06 TA09836
    Text: RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 60V The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits


    Original     		RFG60P06E RFG60P06E 175oC P-CHANNEL 45A TO-247 POWER MOSFET rfg60p06 TA09836 PDF

    F1S60P03

    Abstract: f1s60 RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 TB334
    Text: [ /Title RFG60 P03, RFP60P 03, RF1S60 P03, RF1S60 P03SM /Subject (60A, 30V, RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Semiconductor 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using


    Original     		RFG60 RFP60P RF1S60 P03SM) RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 80e-2 F1S60P03 f1s60 RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 TB334 PDF

    RFG60P05E

    Abstract: TB334
    Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		RFG60P05E O-247 175oC TB334 RFG60P05E TB334 PDF

    RFG60P06E

    Abstract: P-CHANNEL 45A TO-247 POWER MOSFET rfg60p06
    Text: RFG60P06E Data Sheet July 1999 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 60V • 2kV ESD Rated The RFG60P06E incorporates ESD protection and is designed to withstand 2kV Human Body Model of ESD. • Related Literature Formerly developmental type TA09836.


    Original     		RFG60P06E RFG60P06E P-CHANNEL 45A TO-247 POWER MOSFET rfg60p06 PDF

    f1s60

    Abstract: No abstract text available
    Text: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet Title FG6 03, P60 3, 1S6 03S bt A, V, 27 m, anwer OSTs utho eyrds ter- July 1999 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		RFG60P03, RFP60P03, RF1S60P03SM TA49045. f1s60 PDF

    Untitled

    Abstract: No abstract text available
    Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998


    Original     		RFF60P06 RFF60P06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    60P06E

    Abstract: 6b69e RS111
    Text: RFG60P06E m HARRIS S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancem ent-M ode Power MOSFET J a n u a ry 199 6 Features Package JEDEC STYLE TO-247 • 6 0 A ,6 0 V SOURCE • * *D S O N = 0 . 0 3 0 1 2 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M o d e l


    OCR Scan     		RFG60P06E O-247 72e-3 43e-3 91e-7 98e-9 11e-1 34e-3 46e-12) 15e-10 60P06E 6b69e RS111 PDF

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­


    OCR Scan     		RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 0-027Q 69e-4 33e-6 05e-9 33e-8) 80e-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: tïï\ H U Ë J S E M I C O N D U C T O R A R R RFG60P06E IS 60A. 60V, ESD Rated. Avalanche Rated. P-Channel Enhancement-Mode Power MOSFET December 1995 Package Features JEDEC STYLE TO-247 • 60A, 60V ' SOURCE r DS ON = 0 -0 3 0 ^ • Temperature Compensating PSPICE Model


    OCR Scan     		RFG60P06E O-247 RFG60P06E 98e-9 11e-1 34e-3 46e-12) 15e-10 1e-30 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG60P05E Semiconductor 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET September 1998 Features Description • 60A, 50V • Peak Current vs Pulse Width Curve This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes


    OCR Scan     		RFG60P05E TA09835. 0-030i2 PDF

    RFG60P05E

    Abstract: No abstract text available
    Text: RFG60P05E in te fs il D a ta S h e e t J u ly 1 9 9 9 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0-030Q • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve


    OCR Scan     		RFG60P05E TA09835. 0-030Q RFG60P05E AN7254 AN7260. PDF

    60p03

    Abstract: PLIC
    Text: f jì RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM HARRIS S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JE DEC S TYLE TO -247 SOURCE ’ rDS ON = 0.027S2 DRAIN • Temperature Compensating PSPICE Model


    OCR Scan     		RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 027S2 RF1S60P03 RF1S60P03SM 1e-30 60p03 PLIC PDF

    60P05E

    Abstract: No abstract text available
    Text: RFG60P05E RFG60P06E ÎD H a r r is P-Channel Enhancem ent-M ode Power Field-Effect Transistors MegaFETs January 1994 F ea tu re s • RFG60P05E = -60A, -50V, Package rD S ( 0 n) T O -2 4 7 T O P VIEW = 0.026ÎÎ • RFG 60P06E = -60A, -60V, rD S(0n) = 0.030fl


    OCR Scan     		RFG60P05E RFG60P06E RFG60P05E 60P06E 030fl 60P05E PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG60P05E & HAS«» 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET D e c e m b e r 1995 Package Features JEDEC STYLE TO-247 • 60 A ,50V SOURCE • rDS ON = 0.03012 • Temperature Compensating PSPICE Model • 2kV ESD Rated


    OCR Scan     		RFG60P05E O-247 11e-1 34e-3TRS2 46e-12) 15e-10 1e-30 42e-4 85e-3 PDF

    P-CHANNEL 45A TO-247 POWER MOSFET

    Abstract: RFG60P06E
    Text: interrii RFG60P06E D a ta S h e e t J u ly 1 9 9 9 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated


    OCR Scan     		RFG60P06E RFG60P06E TA09836. 030CTION AN7254 AN7260. P-CHANNEL 45A TO-247 POWER MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: in te rrii RFG60P03, RFP60P03, RF1S60P03SM D a la S h e e t J u ly 1 9 9 9 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 5 1 .3 Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		RFG60P03, RFP60P03, RF1S60P03SM TA49045. RF1S60P03SM AN7254 AN7260. PDF