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    RCD100N19 Price and Stock

    ROHM Semiconductor RCD100N19TL

    MOSFET N-CH 190V 10A CPT3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RCD100N19TL Digi-Reel 1,108 1
    • 1 $1.94
    • 10 $1.239
    • 100 $1.94
    • 1000 $0.60737
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    RCD100N19TL Cut Tape 1,108 1
    • 1 $1.94
    • 10 $1.239
    • 100 $1.94
    • 1000 $0.60737
    • 10000 $0.60737
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    RCD100N19TL Reel
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    Verical RCD100N19TL 2,185 108
    • 1 -
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    • 1000 $1.0359
    • 10000 $1.0359
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    Newark RCD100N19TL Cut Tape 1
    • 1 $0.651
    • 10 $0.651
    • 100 $0.651
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    Quest Components RCD100N19TL 1,748
    • 1 $2.32
    • 10 $2.32
    • 100 $2.32
    • 1000 $0.812
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    RCD100N19TL 40
    • 1 $2.0396
    • 10 $1.5297
    • 100 $1.2748
    • 1000 $1.2748
    • 10000 $1.2748
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    Avnet Silica RCD100N19TL 11 Weeks 2,500
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    RCD100N19 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RCD100N19TL Rohm Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 190V 10A CPT3 Original PDF

    RCD100N19 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: RCD100N19 Nch 190V 10A Power MOSFET Datasheet lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.


    Original
    PDF RCD100N19 182mW SC-63) OT-428> R1120A

    C10N19

    Abstract: RCD-100
    Text: RCD100N19 Datasheet Nch 190V 10A Power MOSFET lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.


    Original
    PDF RCD100N19 182mW SC-63) OT-428> C10N19 R1120A RCD-100

    C10N19

    Abstract: RCD100N
    Text: RCD100N19 RCD100N19 Datasheet Nch 190V 10A Power MOSFET lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.


    Original
    PDF RCD100N19 182mW SC-63) OT-428> C10N19 R1120A RCD100N

    RCD100N19

    Abstract: No abstract text available
    Text: RCD100N19 Nch 190V 10A Power MOSFET Datasheet lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.


    Original
    PDF RCD100N19 182mW SC-63) OT-428> R1120A RCD100N19