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ROHM Semiconductor R6012FNX MOSFET N-CH 600V 12A TO220FM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R6012FNX	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	R6012FNX					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Verical	R6012FNX		90		49	1 - 10 - 100 $3.479 1000 $3.479 10000 $3.479	Buy Now
Newark	R6012FNX	Bulk			1	1 $3.31 10 $3.31 100 $3.31 1000 $3.31 10000 $3.31	Buy Now
Future Electronics	R6012FNX	Bulk		23 Weeks	500	1 - 10 - 100 - 1000 $2.18 10000 $2.18	Buy Now

Quest Components	R6012FNX		72			1 $3.063 10 $3.063 100 $2.042 1000 $2.042 10000 $2.042	Buy Now
ComSIT USA	R6012FNX		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
CoreStaff Co Ltd	R6012FNX		90			1 $1.098 10 $1.068 100 $1.028 1000 $1.021 10000 $1.021	Buy Now

R6012FNX Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
R6012FNX		ROHM	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 12A TO-220FM		Original	PDF

R6012FNX Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: R6012FNX 10V Drive Nch MOSFET - R6012FNX Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.	Original	PDF	R6012FNX O-220FM RdsOnVgs10000
Untitled Abstract: No abstract text available Text: R6012FNX Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed.	Original	PDF	R6012FNX O-220FM R6012FNX R1120A
Untitled Abstract: No abstract text available Text: Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage	Original	PDF	R6012FNX O-220FM R6012FNX R1120A
Untitled Abstract: No abstract text available Text: Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage	Original	PDF	R6012FNX O-220FM R6012FNX R1120A
Untitled Abstract: No abstract text available Text: R6012FNX Nch 600V 12A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.51W ID 12A PD 50W TO-220FM (3) (1) (2) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.	Original	PDF	R6012FNX O-220FM R1102A