NE3520S03
Abstract: nE352
Text: Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA • K band Micro-X plastic S03 package
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NE3520S03
R09DS0029EJ0100
NE3520S03-T1C
NE3520S03-T1C-A
NE3520S03-T1D
NE3520S03-T1D-A
NE3520S03
nE352
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ne3520
Abstract: nE352 hjfet
Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA
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Original
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PDF
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NE3520S03
R09DS0029EJ0100
NE3520S03-T1C
NE3520S03-T1C-A
NE3520S03-T1D
NE3520S03-T1D-A
ne3520
nE352
hjfet
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