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    Text: Data Sheet HAT2240C R07DS1184EJ0500 Previous: REJ03G1241-0400 Rev.5.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 75 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device


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    PDF HAT2240C R07DS1184EJ0500 REJ03G1241-0400) PWSF0006JA-A VD2886-9022/9044