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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Data Sheet HAT2196C R07DS1178EJ0600 Previous: REJ03G1235-0500 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 45 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 2.5 V gate drive devices.	Original	PDF	HAT2196C R07DS1178EJ0600 REJ03G1235-0500) PWSF0006JA-A

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: Data Sheet HAT2196C R07DS1178EJ0600 Previous: REJ03G1235-0500 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 45 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 2.5 V gate drive devices.

Original

PDF

HAT2196C R07DS1178EJ0600 REJ03G1235-0500) PWSF0006JA-A