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    Text: Preliminary Datasheet 2SJ574 Silicon P Channel MOS FET High Speed Switching R07DS0574EJ0500 Rev.5.00 Jan 10, 2014 Features • Low on-resistance RDS = 1.1 Ω typ. VGS = –10 V, ID = –150 mA RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA) • 4 V gate drive device.


    Original     		PDF 2SJ574 R07DS0574EJ0500 PLSP0003ZB-A