Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK6013DPE R07DS0486EJ0200 Previous: REJ03G1535-0100 Rev.2.00 Jun 21, 2012 600V - 11A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.58 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C) Low leakage current
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Original
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RJK6013DPE
R07DS0486EJ0200
REJ03G1535-0100)
PRSS0004AE-B
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PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK6013DPE R07DS0486EJ0200 Previous: REJ03G1535-0100 Rev.2.00 Jun 21, 2012 600V - 11A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.58 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C) Low leakage current
|
Original
|
RJK6013DPE
R07DS0486EJ0200
REJ03G1535-0100)
PRSS0004AE-B
|
PDF
|