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    RJH30H1

    Abstract: RJH30 RJH30H1DPP-M0 PRSS0003AF-A RJh30H Silicon N Channel IGBT High Speed Power Switching
    Text: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Features •      Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original     		PDF RJH30H1DPP-M0 O-220FL R07DS0463EJ0200 PRSS0003AF-A O-220FL) RJH30H1 RJH30 RJH30H1DPP-M0 PRSS0003AF-A RJh30H Silicon N Channel IGBT High Speed Power Switching

    RJH30H1

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Features •      Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original     		PDF RJH30H1DPP-M0 R07DS0463EJ0200 O-220FL PRSS0003AF-A O-220FL) RJH30H1