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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6012DPE R07DS0445EJ0300 Previous: REJ03G1481-0200 Rev.3.00 Jun 17, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		RJK6012DPE R07DS0445EJ0300 REJ03G1481-0200) PRSS0004AE-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6012DPE R07DS0445EJ0300 Previous: REJ03G1481-0200 Rev.3.00 Jun 17, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		RJK6012DPE R07DS0445EJ0300 REJ03G1481-0200) PRSS0004AE-B PDF