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    RQK2501YGDQA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0400 Rev.4.00 Jan 10, 2014 Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive • Low drive current • High speed switching


    Original     		RQK2501YGDQA R07DS0312EJ0400 PLSP0003ZB-A RQK2501YGDQA PDF