Untitled
Abstract: No abstract text available
Text: QN100 QUALITY NOTE MEMORY PRODUCTS QUALITY PROGRAM The Corporate quality program of SGS-THOMSON is published as the SURE Semiconductor Users Reliability Evaluation Program. The quality program for memory products follows closely this Program. Described here are the particular controls that apply specifically to memories starting with the Lot
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QN100
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QN100
Abstract: JESD22-A113
Text: QN100 QUALITY NOTE MEMORY PRODUCTS QUALITY PROGRAM The Corporate quality program of SGS-THOMSON is published as the SURE Semiconductor Users Reliability Evaluation Program. The quality program for memory products follows closely this Program. Described here are the particular controls that apply specifically to memories starting with the Lot
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QN100
QN100
JESD22-A113
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RH A4 130
Abstract: QN100 CP 1005 eeprom 2016 JESD22-A113 quality control procedure MATERIAL CONTROL PROCEDURE
Text: QN100 QUALITY NOTE MEMORY PRODUCTS QUALITY PROGRAM The Corporate quality program of SGS-THOMSON is published as the SURE Semiconductor Users Reliability Evaluation Program. The quality program for memory products follows closely this Program. Described here are the particular controls that apply specifically to memories starting with the Lot
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QN100
RH A4 130
QN100
CP 1005
eeprom 2016
JESD22-A113
quality control procedure
MATERIAL CONTROL PROCEDURE
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QN68
Abstract: VQ100 actel part markings
Text: Advance v0.4 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process
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130-nm,
128-Bit
QN68
VQ100
actel part markings
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QN68
Abstract: VQ100 PAC11 ProASIC3 handbook
Text: Advance v0.5 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process
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130-nm,
128-Bit
QN68
VQ100
PAC11
ProASIC3 handbook
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2114 1k x 4 SRAM
Abstract: AGLN010
Text: Advance v0.2 IGLOO nano Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/Os • 1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chip • Single-Ended I/O Standards: LVTTL, LVCMOS
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Abstract: No abstract text available
Text: IGLOO nano Handbook IGLOO nano Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – IGLOO nano Datasheet IGLOO nano Low-Power Flash FPGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
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Actel igloo
Abstract: Datasheet AGLN020 CS81 VQ100 RAM51 AGLN010
Text: Advance v0.8 IGLOO nano Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits High-Performance Routing Hierarchy Low Power Advanced I/Os • Segmented, Hierarchical Routing and Clock Structure • • • • • nanoPower Consumption—Industry’s Lowest Power
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71most
Actel igloo
Datasheet AGLN020
CS81
VQ100
RAM51
AGLN010
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Untitled
Abstract: No abstract text available
Text: Revision 9 ProASIC3 nano Flash FPGAs Features and Benefits Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chip • Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V / 2.5 V / 1.8 V / 1.5 V
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Abstract: No abstract text available
Text: Revision 13 IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology Features and Benefits High-Performance Routing Hierarchy Low Power Advanced I/Os • Segmented, Hierarchical Routing and Clock Structure • • • • • nanoPower Consumption—Industry’s Lowest Power
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Abstract: No abstract text available
Text: Revision 10 ProASIC3 nano Flash FPGAs Features and Benefits Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chip • Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V / 2.5 V / 1.8 V / 1.5 V
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Amplifier 1000w schematic diagrams
Abstract: 1000w audio amplifier circuit diagram 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 500w audio power amplifier circuit diagram 1000w power amplifier circuit diagram 500w audio amplifier circuit diagram 1000W MOSFET Audio Amplifier Circuit 1000w Mosfet Power Audio Amplifier circuit Diagram 12v 1000W AUDIO AMPLIFIER 1000W power amplifier schematic diagrams
Text: Tri path Technol og y, I nc. - Techni cal I nformati on RB-TDA2500-1 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Rev. 1.0 May 2005 GENERAL DESCRIPTION The RB-TDA2500 reference board is based on the TDA2500 digital audio power amplifier driver from
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RB-TDA2500-1
RB-TDA2500
TDA2500
/-60V
/-93V
RB-TDA2500-1:
short34NB20
Amplifier 1000w schematic diagrams
1000w audio amplifier circuit diagram
12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM
500w audio power amplifier circuit diagram
1000w power amplifier circuit diagram
500w audio amplifier circuit diagram
1000W MOSFET Audio Amplifier Circuit
1000w Mosfet Power Audio Amplifier circuit Diagram
12v 1000W AUDIO AMPLIFIER
1000W power amplifier schematic diagrams
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Untitled
Abstract: No abstract text available
Text: Revision 11 ProASIC3 nano Flash FPGAs Features and Benefits Advanced I/Os • 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chip • Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V / 2.5 V / 1.8 V / 1.5 V
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Abstract: No abstract text available
Text: Advance v0.3 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process
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A3P010
Abstract: No abstract text available
Text: Advance v0.2 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process
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QN48
Abstract: AGLN010
Text: Advance v0.8 IGLOO nano Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits High-Performance Routing Hierarchy Low Power Advanced I/Os • Segmented, Hierarchical Routing and Clock Structure • • • • • nanoPower Consumption—Industry’s Lowest Power
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QN68
Abstract: VQ100 actel 0841 actel part markings
Text: Advance v0.6 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process
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130-nm,
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QN68
VQ100
actel 0841
actel part markings
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actel part markings
Abstract: qfn132 Datasheet AGLN020 Datasheet AGLN060 CS81 VQ100 AGLN010
Text: Advance v0.7 IGLOO nano Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/Os • 1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chip • Single-Ended I/O Standards: LVTTL, LVCMOS
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JESD8-12,
actel part markings
qfn132
Datasheet AGLN020
Datasheet AGLN060
CS81
VQ100
AGLN010
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actel part markings
Abstract: QN48 actel die run marking QN68 qfn132 ProASIC3 VQ100
Text: Advance v0.4 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process
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130-nm,
128-Bit
actel part markings
QN48
actel die run marking
QN68
qfn132
ProASIC3
VQ100
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MARKING 9AB
Abstract: A3PN030Z A3PN250Z
Text: Revision 8 ProASIC3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS
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130-nm,
128-Bit
MARKING 9AB
A3PN030Z
A3PN250Z
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actel date code
Abstract: No abstract text available
Text: Revision 8 ProASIC3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS
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AGLN030Z
Abstract: AGLN010 AGLN250-Z AGLN060Z
Text: Revision 10 IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology Features and Benefits High-Performance Routing Hierarchy Low Power Advanced I/Os • Segmented, Hierarchical Routing and Clock Structure • • • • • nanoPower Consumption—Industry’s Lowest Power
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IO39RSB2
Abstract: No abstract text available
Text: Revision 12 IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology Features and Benefits High-Performance Routing Hierarchy Low Power Advanced I/Os • Segmented, Hierarchical Routing and Clock Structure • • • • • nanoPower Consumption—Industry’s Lowest Power
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Untitled
Abstract: No abstract text available
Text: r=7 SGS-THOMSON H0 g[E]@iL[ÌM(ò Ri]0(gÌ QUALITY NOTE MEMORY PRODUCTS QUALITY PROGRAM The Corporate quality program of SGS-THOMSON is published as the SURE (Semiconductor Users Reliability Evaluation) Program. The quality pro gram for memory products follows closely this Pro
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OCR Scan
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MIL-STD-883
1000hrs
1500Q,
100pF,
96hrs
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