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    ITT ZENER

    Abstract: N5251 1N5225 1N5226 1N5227 1N5228 1N5229 ZMM5225 ZMM5226 1N5240
    Text: I T T CORP/ I T T CMPNTS 41E D • 4bfl2bfl4 QDG14DS T ■ ITO TM H I ZENER DIODES 1 N5225 Series 500 mW Glass Zener Diodes in DO-35 Package T. = 25°C I tM?4»onri lN$$ySsrte»{$60 Ndf»).] Using the type designations ZMM5225, ZMM5226 and soon, these Zener diodes are available in the MiniMELF package with the same


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    PDF 00Q140S N5225 DO-35 tM746qnrf ZMM5225, ZMM5226 DO-34 1N5225 1N5226 1N5227 ITT ZENER N5251 1N5228 1N5229 ZMM5225 1N5240

    Untitled

    Abstract: No abstract text available
    Text: CHICAGO MINIATURE b2E LAMP D • 2DÔ20MÔ QDG14 27 bDT ■ CML Chicago Miniature Lamp ~AN AMERICAN MANUFACTURER- T -1 3/4 Flashing LED Lam ps D E S C R I P T I O N A N D F E A T U R E S These unique LED lamps have integral circuits that will flash the lamp on and off continuously at frequencies from 1.5 to


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    PDF QDG14 CMD56BHD CMD56BGD CMD56BYD CMD56BID. 100nA)

    2SC3586

    Abstract: NE68000 2SC3585 NE68035 2SC3587 NE68033 NE680 NE68037 epitaxial micro-x IE68C
    Text: N E C / S 1SE CALIFORNIA E D • 1=427414 QDG143b b tsh t NE68000 NE68033 NE68035 NE68037 NPN SILICON HIGH FREQUENCY TRANSISTOR C FEATURES DESCRIPTION AND APPLICATIONS • HIG H GAIN BANDW IDTH PRODUCT: fr = 10 GHz The NE680 series o f NPN epitaxial silicon transistors is


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    PDF NE68000 NE68033 NE68035 NE68037 NE680 2SC3586 2SC3585 2SC3587 NE68037 epitaxial micro-x IE68C

    MA152

    Abstract: 1n5234 itt
    Text: I T T CORP/ I T T CMPNTS 41E D • 4bfl2bfl4 QDG14DS T ■ ITO TM H I ZENER DIODES 1 N5225 Series 500 mW Glass Zener Diodes in DO-35 Package T. = 25°C I tM?4»onri lN$$ySsrte»{$60 Ndf»).] Using the type designations ZMM5225, ZMM5226 and soon, these Zener diodes are available in the MiniMELF package with the same


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    PDF QDG14DS N5225 DO-35 ZMM5225, ZMM5226 DO-34 1N5225 1N5226 1N5227 1N5228 MA152 1n5234 itt

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 4 Megabit CMOS EEPROM DPE512S8N DESCRIPTION: The DPE512S8N is a 512K X 8 high-density, low-power EEPROM module comprised of four ceramic 128K X 8 monolithic EEPROM's, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on a co-fired ceramic substrate


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    PDF DPE512S8N DPE512S8N 600-mil-wide, 32-pin 300ns 30A046-00