PN163
Abstract: PNZ163NC
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ163NC (PN163(NC) Silicon planar type Unit: mm φ1.1 0.8 0.8 max. 3.0±0.3 1.4±0.2 0.9 0.5 R0.5 12 min. • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-emitter voltage (Base open)
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2002/95/EC)
PNZ163NC
PN163
PNZ163NC
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ163NC (PN163(NC) Silicon planar type Unit: mm 0.8 max. 2.4 1.1 3.0±0.3 φ1.1 12 min. Parameter Symbol Rating Collector-emitter voltage (Base open) VCEO 20 V 20 mA IC Collector power dissipation
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2002/95/EC)
PNZ163NC
PN163
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PN163
Abstract: PNZ163NC
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ163NC (PN163(NC) Silicon planar type Unit: mm 3.0±0.3 φ1.1 Collector-emitter voltage (Base open) Collector current Collector power dissipation Operating ambient temperature
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2002/95/EC)
PNZ163NC
PN163
PNZ163NC
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ163NC (PN163(NC) Silicon planar type Unit: mm Parameter Symbol Rating Collector-emitter voltage (Base open) VCEO 20 V IC 20 mA Collector current Unit φ1.1 0.8 0.8 max. • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
PNZ163NC
PN163
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PNZ163NC
Abstract: No abstract text available
Text: Phototransistors PNZ163NC PN163-(NC Silicon NPN Phototransistor 3.5±0.3 Gate the rest 2.4 1.1 0.8 max. 1.1 0.8 Unit : mm For optical control systems Features High sensitivity 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 Fast response : tr = 4 µs (typ.)
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PNZ163NC
PN163-
PNZ163NC
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PN163
Abstract: PNZ163NC
Text: Phototransistors PNZ163NC PN163(NC Silicon planar type Unit: mm Parameter Symbol Rating Collector-emitter voltage (Base open) VCEO 20 V IC 20 mA Collector current Unit φ1.1 0.8 0.8 max. • Absolute Maximum Ratings Ta = 25°C 2.4 1.1 3.5±0.3 12 min. • High sensitivity
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PNZ163NC
PN163
PNZ163NC
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ163NC Silicon NPN Phototransistor 3.5±0.3 Gate the rest 2.4 1.1 0.8 max. 1.1 0.8 Unit : mm For optical control systems Features High sensitivity 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 Fast response : tr = 4 µs typ. 12 min.
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PNZ163NC
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TC4009BP
Abstract: DNP319 tps607 TLP1230 TLP1200 GP1S093HCZ0F SG2751 2SC1959 IS471FE PT380F
Text: 光センサ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106CH1
TLP1025
TLP1029
TLP1033A
TLP1034
TLP1201A
TLP1201A
TLP1204
TC4009BP
DNP319
tps607
TLP1230
TLP1200
GP1S093HCZ0F
SG2751
2SC1959
IS471FE
PT380F
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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