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    PA191 Search Results

    PA191 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPA1919TE-T1-AT Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    UPA1911ATE-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    UPA1911ATE-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    UPA1915TE(0)-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    UPA1919TE-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    PA191 Price and Stock

    Texas Instruments OPA191IDR

    IC OPAMP GP 1 CIRCUIT 8SOIC
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    DigiKey OPA191IDR Reel 2,500 2,500
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    Mouser Electronics OPA191IDR 3,108
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    TME OPA191IDR 1
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    Chip1Stop OPA191IDR Cut Tape 2,279
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    Texas Instruments OPA191IDGKR

    IC OPAMP GP 1 CIRCUIT 8VSSOP
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    DigiKey OPA191IDGKR Digi-Reel 1,879 1
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    OPA191IDGKR Cut Tape 1,879 1
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    Mouser Electronics OPA191IDGKR 7,655
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    TME OPA191IDGKR 1
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    Texas Instruments OPA191IDBVT

    IC OPAMP GP 1 CIRCUIT SOT23-5
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    DigiKey OPA191IDBVT Digi-Reel 600 1
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    OPA191IDBVT Cut Tape 600 1
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    OPA191IDBVT Reel 500 250
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    Mouser Electronics OPA191IDBVT 3,001
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    TME OPA191IDBVT 1
    • 1 $3.55
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    Win Source Electronics OPA191IDBVT 29,980
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    Texas Instruments OPA191IDGKT

    IC OPAMP GP 1 CIRCUIT 8VSSOP
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    DigiKey OPA191IDGKT Digi-Reel 333 1
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    OPA191IDGKT Cut Tape 333 1
    • 1 $3.34
    • 10 $2.511
    • 100 $2.0747
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    OPA191IDGKT Reel 250 250
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    • 10000 $1.78881
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    Mouser Electronics OPA191IDGKT 451
    • 1 $3.34
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    • 100 $1.64
    • 1000 $1.63
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    TME OPA191IDGKT 1
    • 1 $3.55
    • 10 $3.19
    • 100 $2.54
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    ITT Interconnect Solutions DB-25P-A191-K87

    D SUB
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    DigiKey DB-25P-A191-K87 Bulk 273 1
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    Avnet Abacus DB-25P-A191-K87 36 Weeks 168
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    Mouser Electronics DB-25P-A191-K87
    • 1 $15.26
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    RS DB-25P-A191-K87 Box 764 20
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    DB-25P-A191-K87 Package 764 56
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    PA191 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PA1910 NEC MOS Field Effect Transistor Original PDF
    PA1910TE NEC MOS Field Effect Transistor Original PDF
    PA1911 NEC MOS Field Effect Transistor Original PDF
    PA1912 NEC MOS Field Effect Transistor Original PDF
    PA1913 Greenlee Textron Punchdown, Blades, Tools, UTP STRIPPER/PUNCHDOWN TOOL Original PDF
    PA1913 NEC MOS Field Effect Transistor Original PDF
    PA1914 NEC MOS Field Effect Transistor Original PDF
    PA1915 NEC MOS Field Effect Transistor Original PDF
    PA1916 Greenlee Textron Insertion, Extraction, Tools, EXTRACTOR BNC 12-" BAGGED Original PDF

    PA191 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PA1911

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1911 is a switching device which can be driven


    Original
    PDF PA1911 PA1911

    SC-95

    Abstract: transistor NEC 2500
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1919 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION • 2.5 V drive available • Low on-state resistance RDS(on)1 = 58 mΩ MAX. (VGS = −4.5 V, ID = −3.0 A) RDS(on)2 = 60 mΩ MAX. (VGS = −4.0 V, ID = −3.0 A)


    Original
    PDF PA1919 PA1919 SC-95 transistor NEC 2500

    marking tl

    Abstract: SC-95 PA1916
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1916 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION • 1.8 V drive available • Low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 49 mΩ MAX. (VGS = –3.0 V, ID = –2.5 A)


    Original
    PDF PA1916 PA1916TE PA1916 marking tl SC-95

    PA1913

    Abstract: UPA1913TE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 2.5 V power source • Low on-state resistance


    Original
    PDF PA1913 PA1913 UPA1913TE

    D13806

    Abstract: UPA1912TE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION 0.32 +0.1 –0.05 0.65–0.15 directly by a 2.5-V power source. +0.1 The µPA1912 features a low on-state resistance and excellent


    Original
    PDF PA1912 PA1912 D13806 UPA1912TE

    SC-95

    Abstract: N transistor NEC K 2500
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1919 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING <R> • 2.5 V drive available • Low on-state resistance RDS on 1 = 58 mΩ MAX. (VGS = −4.5 V, ID = −3.0 A) RDS(on)2 = 60 mΩ MAX. (VGS = −4.0 V, ID = −3.0 A)


    Original
    PDF PA1919 PA1919 SC-95 N transistor NEC K 2500

    uPA1916TE

    Abstract: SC-95
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1916 P チャネル パワーMOS FET スイッチング用 外形図(単位: mm) µPA1916 は,1.8 V 電源系による直接駆動が可能なスイッチング素子


    Original
    PDF PA1916 PA1916 PA1916TE SC-95 G15635JJ1V0DS uPA1916TE SC-95

    PA1910

    Abstract: PA1910TE SC-95
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1910 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1910 is a switching device which can be driven 0.65–0.15 0.32 +0.1 –0.05 +0.1 The µPA1910 features a low on-state resistance and excellent


    Original
    PDF PA1910 PA1910 PA1910TE SC-95

    SC-95

    Abstract: marking TS pa1918
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1918 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 FEATURES PACKAGE DRAWING Unit: mm 2.8 ±0.2 The µPA1918 is a switching device, which can be driven


    Original
    PDF PA1918 PA1918 SC-95 marking TS

    D1380

    Abstract: PA1912 SC-95 UPA1912TE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION 0.32 +0.1 –0.05 0.65–0.15 directly by a 2.5-V power source. +0.1 The µPA1912 features a low on-state resistance and excellent


    Original
    PDF PA1912 PA1912 D1380 SC-95 UPA1912TE

    SC-95

    Abstract: marking tk
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION +0.1 0.65–0.15 • Can be driven by a 2.5 V power source • Low on-state resistance RDS(on)1 = 115 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)


    Original
    PDF PA1911A PA1911ATE PA1911A SC-95 marking tk

    SC-95

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1917 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION • 1.8 V drive available • Low on-state resistance RDS(on)1 = 53 mΩ MAX. (VGS = –4.5 V, ID = –3.0 A) RDS(on)2 = 70 mΩ MAX. (VGS = –2.5 V, ID = –3.0 A)


    Original
    PDF PA1917 PA1917 SC-95

    PA1911

    Abstract: D1345
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 2.5-V power source • Low on-state resistance


    Original
    PDF PA1911 PA1911 D1345

    pa1918

    Abstract: SC-95 3uPA1918
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1918 P チャネル MOS FET スイッチング用 µPA1918 は,4.0 V 電源系による直接駆動が可能なス 外形図(単位:mm) イッチング素子です。


    Original
    PDF PA1918 PA1918 PA1918TE SC-95 5926JJ1V0DS G15926JJ1V0DS SC-95 3uPA1918

    PA1913

    Abstract: SC-95 UPA1913TE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1913 is a switching device which can be driven


    Original
    PDF PA1913 PA1913 SC-95 UPA1913TE

    PA1913

    Abstract: D1380 UPA1913TE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1913 is a switching device which can be driven


    Original
    PDF PA1913 PA1913 D1380 UPA1913TE

    PA1914

    Abstract: SC-95
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1914 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1914 is a switching device which can be driven


    Original
    PDF PA1914 PA1914 SC-95

    PA1915

    Abstract: SC-95
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1915 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 2.5-V power source • Low on-state resistance


    Original
    PDF PA1915 PA1915 SC-95

    PA1914

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1914 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance


    Original
    PDF PA1914 PA1914

    SC-95

    Abstract: PA1911
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1911A P チャネル パワーMOS FET スイッチング用 µPA1911A は,2.5 V 電源系による直接駆動が可能なスイッチング素子 外形図(単位: mm)


    Original
    PDF PA1911A PA1911A PA1911ATE SC-95 G15044JJ1V0DS SC-95 PA1911

    marking _TH

    Abstract: PA1915 SC-95
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1915 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 2.5-V power source • Low on-state resistance


    Original
    PDF PA1915 PA1915 marking _TH SC-95

    Qbh-133

    Abstract: QBH-104 PA381 QBH198 qbh-109 amplifonix PA710 qbh-110 QBH109 PA630
    Text: PHOENIX-M/A-COM Amplifier Direct Replacement List PHOENIX- AMPLIFONIX M/A-COM MODEL# MODEL# PA002 PA005 PA010 PAO15 PA030 PA050 PA055 PA056 PAIO PA100 PAI 10 PAI 12 PA 120 PA 150 PA 162 PA 170 PA 180 PA181 PA 190 PA191 PA211 PA219 TM7302 TM6505 TM6511 TM9717


    OCR Scan
    PDF PA002 PA005 PA010 PAO15 PA030 PA050 PA055 PA056 PA100 PA181 Qbh-133 QBH-104 PA381 QBH198 qbh-109 amplifonix PA710 qbh-110 QBH109 PA630

    PA988

    Abstract: PA381 PA195 PA1032 PS605 phoenix pa880 PS665 PS668
    Text: PH O ENIX MICROWAVE ALPHANUMERIC P/N LISTING Phoenix C atalog P/N Page # PA002 PA005 PA010 PA015 PA030 PA050 PA055 PA056 PAIO PAI 00 PAI 10 PAI 12 PAI 20 PAI 50 PAI 62 PAI 70 PAI 77 PAI 79 PAI 80 PAI 81 PA190 PA191 PA195 PAI 96 PAI 97 PA198 PA209 PA211 PA219


    OCR Scan
    PDF PA002 PA005 PA010 PA015 PA030 PA050 PA055 PA056 PA190 PA191 PA988 PA381 PA195 PA1032 PS605 phoenix pa880 PS665 PS668

    Untitled

    Abstract: No abstract text available
    Text: PA191 Series 10-1000 MHz. Cascadable Amplifier See Short Form Chart and Mechanical Section for available outline drawings. Features: typical values • ■ ■ ■ High Output Power.+21.4 dBm . Wide Bandwidth. 10-1000 MHz.


    OCR Scan
    PDF PA191 from-55