P2H4M440H Search Results

P2H4M440H Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
P2H4M440H		Unknown	MOSFET 30A 450-500V		Original	PDF
P2H4M440H		Unknown	FET Data Book		Scan	PDF

P2H4M440H Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
220g Abstract: No abstract text available Text: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible	Original	PDF	50V/500V P2H4M441H P2H4M440H 300KHz P2H4M441H 150iMAX 56i/W -441H -440H 220g
NSC-100 Abstract: Diode Gfg 33 PD4M440H S2 DIODE Text: MOSFET 30A 450~500 V PD4M441H PD4M440H P2H4M441H P2H4M440H •回路図 CIRCUIT PD P2H Rg Rg MOS SBD FRD 1 D2S1 2 SBD D1 MOS G2 S2 MOS SBD 3 S2 FRD FRD S1 S2 D1 SBD MOS D2 FRD S1 G1 G2 S2 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm）	Original	PDF	PD4M441H PD4M440H P2H4M441H P2H4M440H PD4M441H440H P2H4M441H440H Weight220g Duty50 PD4M441H/P2H4M441H NSC-100 Diode Gfg 33 S2 DIODE
Untitled Abstract: No abstract text available Text: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible	Original	PDF	50V/500V P2H4M441H P2H4M440H 300KHz P2H4M441H P2H4M44xH
IR 440H Abstract: No abstract text available Text: MOSFET 30A 450～ 450～500V PD4M441H/440H PD4M441H P2H4M441H PD4M440H P2H4M440H P2H4M441H/440H 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage	Original	PDF	50500V PD4M441H/440H PD4M441H PD4M440H P2H4M441H P2H4M440H P2H4M441H/440H PD4M441H/P2H4M441H PD4M440H/P2H4M440H -441H IR 440H
P2H4M441H Abstract: 2015A 441H P2H4M440H PD4M440H PD4M441H IR 440H Text: MOSFET 30A 450～ 450～500V PD4M441H/440H PD4M441H P2H4M441H PD4M440H P2H4M440H P2H4M441H/440H 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項目 Rating ドレイン・ソース間電圧 VDSS	Original	PDF	50500V PD4M441H/440H PD4M441H P2H4M441H PD4M440H P2H4M440H P2H4M441H/440H PD4M441H/P2H4M441H PD4M440H/P2H4M440H P2H4M441H 2015A 441H P2H4M440H PD4M440H PD4M441H IR 440H
Untitled Abstract: No abstract text available Text: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Separated Circuit Dimension mm 108.0 * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible	Original	PDF	50V/500V P2H4M441H P2H4M440H 300KHz P2H4M441H -441H -440H
Untitled Abstract: No abstract text available Text: MOSFET 30A 450~500 V PD4M441H PD4M440H P2H4M441H P2H4M440H •回路図 CIRCUIT PD P2H Rg Rg MOS SBD FRD 1 D2S1 2 SBD D1 MOS G2 S2 MOS SBD 3 S2 FRD FRD S1 S2 D1 SBD MOS D2 FRD S1 G1 G2 S2 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm）	Original	PDF	PD4M441H PD4M440H P2H4M441H P2H4M440H PD4M441H440H P2H4M441H440H Weight220g Duty50 PD4M441H/P2H4M441H
PT76S16 Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ	Original	PDF
508RP Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40 Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ	Original	PDF
PDM5001 Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16 Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH	Original	PDF	C3557 PH1503 PH150 PDM5001 PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
FCGS20A12 Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10 Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ	Original	PDF
PF0012 Abstract: Pch MOS FET Text: - 160 - S £ P2H10M441H P2H10M441L P2H4M440H P2H4M440L tt € m & BW BW B b* w - « â f t ? 1 » H V JR X [m * vos* l » * (V) fë £ 3 P d /P c h (A) * * m MOS N 450 DSS 85 D 230 MOS N 450 DSS 70 D 230 MOS N 500 DSS 30 D 230 MOS N 500 DSS 30 D 230	OCR Scan	PDF