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NTE Electronics Inc NTE2987 Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	NTE2987		12		12	1 - 10 - 100 $1.094 1000 $1.0917 10000 $1.0917	Buy Now
Arrow Electronics	NTE2987		12		1	1 $1.142 10 $1.1187 100 $1.094 1000 $1.0917 10000 $1.0917	Buy Now
NTE Electronics Inc NTE294 Bipolar Transistor, Pnp, -50V To-92; Transistor Polarity:Pnp; Collector Emitter Voltage Max:50V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:200Mhz Rohs Compliant: No \|Nte Electronics NTE294
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE294	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	NTE294	Bulk	2		1	1 $1.63 10 $1.63 100 $1.48 1000 $1.41 10000 $1.41	Buy Now
Bristol Electronics	NTE294		3			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NTE Electronics Inc NTE293 Transistor Npn Silicon 60V Ic=1A Giant To-92 Case Audio Amp + Driver Compl To Nte294 \|Nte Electronics NTE293
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE293	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NTE Electronics Inc NTE295 Operating Frequency Min:-; Transition Frequency:250Mhz; Dc Current Gain Hfe:60Hfe; Continuous Collector Current Ic:1A; Noise Figure Typ:-; Forward Current Transfer Ratio:-; Collector Emitter Voltage V(Br)Ceo:75V; Power Gain, Gp:- Rohs Compliant: Yes \|Nte Electronics NTE295
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE295	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	NTE295		19		1	1 $2.12 10 $1.69 100 $1.52 1000 $1.52 10000 $1.52	Buy Now
NTE Electronics Inc NTE2980 Transistor, mosfet, n-Channel,60V V(Br)Dss,7.7A I(D),to-251 \|Nte Electronics NTE2980
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE2980	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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NTE29 Datasheets (77)

Part	Manufacturer	Description	Datasheet Type	PDF
NTE29	NTE Electronics	NPN Silicon Complementary Transistor High Power, High Current Switch	Original	PDF
NTE290	NTE Electronics	Silicon Complementary Transistor Audio Power Amplifier, Switch	Original	PDF
NTE290	NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, Audio Power Amp and Switch, Pkg Style U83/TO92	Scan	PDF
NTE2900	NTE Electronics	MOSFET N-Ch, Enhancement Mode High Speed Switch	Original	PDF
NTE2902	NTE Electronics	N-Channel Silicon Junction Field Effect Transistor	Original	PDF
NTE290A	NTE Electronics	Silicon Complementary Transistor Audio Power Amplifier	Original	PDF
NTE290A	NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, Audio Power Amp, Pkg Style TO92	Scan	PDF
NTE291	NTE Electronics	Silicon Complementary Transistor Medium Power Amp, Switch	Original	PDF
NTE291	NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, General Purpose Medium Power Amp & Switch, Pkg Style TO220	Scan	PDF
NTE292	NTE Electronics	Silicon Complementary Transistor Medium Power Amp, Switch	Original	PDF
NTE292	NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, General Purpose Medium Power Amp & Switch, Pkg Style TO220	Scan	PDF
NTE2920	NTE Electronics	MOSFET N-Ch, Enhancement Mode High Speed Switch	Original	PDF
NTE2921	NTE Electronics	MOSFET N-Ch, Enhancement Mode High Speed Switch	Original	PDF
NTE2922	NTE Electronics	MOSFET N-Ch, Enhancement Mode High Speed Switch	Original	PDF

NTE2923	NTE Electronics	MOSFET N-Ch, Enhancement Mode High Speed Switch	Original	PDF
NTE2924	NTE Electronics	MOSFET N-Ch, Enhancement Mode High Speed Switch	Original	PDF
NTE293	NTE Electronics	Silicon Complementary Transistor Audio Amplifier and Driver	Original	PDF
NTE293	NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, Audio Amp and Driver, Pkg Style Giant TO92	Scan	PDF
NTE2930	NTE Electronics	MOSFET N-Channel, Enhancement Mode High Speed Switch	Original	PDF
NTE2931	NTE Electronics	MOSFET N-Channel, Enhancement Mode High Speed Switch	Original	PDF

NTE29 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NTE295 Abstract: No abstract text available Text: NTE295 Silicon NPN Transistor RF Power Output, Driver Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V	Original	PDF	NTE295 500mA 500mA, 27MHz, 526-NTE295 NTE295
NTE2906 Abstract: NTE2998 NTE290 Text: NTE2906 MOSFET N−Channel, Enhancement Mode High Speed Switch Compl to NTE2998 D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified)	Original	PDF	NTE2906 NTE2998) NTE2906 NTE2998 NTE290
NTE2976 Abstract: DIODE 240v 3a mosfet for dc to ac inverter Text: NTE2976 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Input Capacitance D Low Static RDS on D Fast Switching Time D Guaranteed Avalanche Resistance Applications: D Switching Power Supply of AC 240V Input D High Voltage Power Supply	Original	PDF	NTE2976 NTE2976 DIODE 240v 3a mosfet for dc to ac inverter
NTE2974 Abstract: No abstract text available Text: NTE2974 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low On–State Resistance: RDS on = 1.1Ω Max (VGS = 10V, ID = 3A) D Low Input Capacitance: Ciss = 1150pF Typ D High Avalanche Capability Ratings D Isolated TO220 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	PDF	NTE2974 1150pF NTE2974
NTE2940 Abstract: No abstract text available Text: NTE2940 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Low Static Drain−Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package Absolute Maximum Ratings:	Original	PDF	NTE2940 NTE2940
NTE2966 Abstract: No abstract text available Text: NTE2966 MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: D Motor Control D Lamp Control D Solenoid Control D DC-DC Converter Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain-Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V	Original	PDF	NTE2966 00A/s NTE2966
NTE2980 Abstract: 77A DIODE Text: NTE2980 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D Fast Switching D TO251 Type Package Absolute Maximum Ratings: Drain Current, ID	Original	PDF	NTE2980 00A/s, NTE2980 77A DIODE
700v 5A mosfet Abstract: computer smps circuit MOSFET 700V 10A NTE2958 313C Text: NTE2958 MOSFET N−Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC−DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: TC = +25°C unless otherwise specified	Original	PDF	NTE2958 700v 5A mosfet computer smps circuit MOSFET 700V 10A NTE2958 313C
NTE2996 Abstract: No abstract text available Text: NTE2996 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Ultra Low On-Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous VGS = 10V	Original	PDF	NTE2996 00A/s, NTE2996
nte2909 Abstract: No abstract text available Text: NTE2909 MOSFET N−Channel, Enhancement Mode High Speed Switch Description: The NTE2909 is a Power MOSFET in a TO220 type package that utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with	Original	PDF	NTE2909 NTE2909 80A/s,
NTE2954 Abstract: No abstract text available Text: NTE2954 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Low Gate Charge: 147nC Typ D Low Reverse Transfer Capacitance: 300pF Typ D Fast Switching D 100% Avalanche Tested D Imporved dv/dt Capability Absolute Maximum Ratings: TC = +25°C unless otherwise specified	Original	PDF	NTE2954 147nC 300pF NTE2954
NTE2956 Abstract: No abstract text available Text: NTE2956 MOSFET N−Channel, Enhancement Mode High Speed Switch Applications: D SMPS D AC Adapter D Power Supply for Printer, Copies, TV, VCR, etc. Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain−Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V	Original	PDF	NTE2956 NTE2956
NTE2975 Abstract: ISD28A Text: NTE2975 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Advanced Process Technology D Ultra Low On−State Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings:	Original	PDF	NTE2975 NTE2975 ISD28A
NTE2996 Abstract: No abstract text available Text: NTE2996 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous VGS = 10V	Original	PDF	NTE2996 NTE2996

computer smps circuit Abstract: MOSFET IGSS 100A 900v mosfet MOSFET 900V 2A NTE2959 Text: NTE2959 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: TC = +25°C unless otherwise specified	Original	PDF	NTE2959 computer smps circuit MOSFET IGSS 100A 900v mosfet MOSFET 900V 2A NTE2959
N-Channel 40V MOSFET 32a Abstract: NTE293 NTE2932 213A Text: NTE2932 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS on : 0.071Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 200V	Original	PDF	NTE2932 N-Channel 40V MOSFET 32a NTE293 NTE2932 213A
NTE2930 Abstract: NTE293 Text: NTE2930 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS on : 0.032Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 100V	Original	PDF	NTE2930 NTE2930 NTE293
74w datasheet Abstract: MOSFET 400V NTE2934 Text: NTE2934 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS on : 0.254Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 400V	Original	PDF	NTE2934 74w datasheet MOSFET 400V NTE2934
NTE293 Abstract: NTE2931 Text: NTE2931 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS on : 0.144Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 200V	Original	PDF	NTE2931 NTE293 NTE2931
077W Abstract: NTE2936 NTE293 Text: NTE2936 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS on : 0.308Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 500V	Original	PDF	NTE2936 077W NTE2936 NTE293
NTE295 Abstract: No abstract text available Text: NTE295 Silicon NPN Transistor RF Power Output, Driver Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V	Original	PDF	NTE295 500mA 500mA, 27MHz, NTE295
NTE2998 Abstract: p-channel 200V Text: NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	PDF	NTE2998 NTE2998 p-channel 200V
NTE2995 Abstract: No abstract text available Text: NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D RDS on = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applications: D High Current, High Speed Switching D Ideal for Off−Line Power Supplies, Adaptor and PFC	Original	PDF	NTE2995 NTE2995
200v 5A mosfet Abstract: 700v 5A mosfet MOSFET 700V 10A NTE2958 computer smps circuit 5A 700V MOSFET MOSFET 30A 700V Text: NTE2958 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: TC = +25°C unless otherwise specified	Original	PDF	NTE2958 200v 5A mosfet 700v 5A mosfet MOSFET 700V 10A NTE2958 computer smps circuit 5A 700V MOSFET MOSFET 30A 700V

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NTE29 Datasheets (77)

NTE29 Datasheets Context Search

NTE295

NTE2906

NTE2976

NTE2974

NTE2940

NTE2966

NTE2980

700v 5A mosfet

NTE2996

nte2909

NTE2954

NTE2956

NTE2975

NTE2996

computer smps circuit

N-Channel 40V MOSFET 32a

NTE2930

74w datasheet

NTE293

077W

NTE295

NTE2998

NTE2995

200v 5A mosfet