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onsemi NGB18N40CLBT4 IGBT 430V 18A 115W D2PAK
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onsemi NGB18N40CLBT4G IGBT 430V 18A 115W D2PAK
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DigiKey	NGB18N40CLBT4G	Reel			800	1 - 10 - 100 - 1000 $1.13333 10000 $1.13333	Buy Now

NGB18N40CLBT4 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NGB18N40CLBT4		On Semiconductor	IGBT Chip, N Channel, 430V, D2PAK, 3-Pin		Original	PDF
NGB18N40CLBT4		On Semiconductor	Ignition IGBT 18 A, 400 V		Original	PDF
NGB18N40CLBT4G		On Semiconductor	TRANS IGBT CHIP N-CH 430V 15A 3DPAK T/R		Original	PDF

NGB18N40CLBT4 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
18n40bg Abstract: GB18N40BG 18n40b NGB18N40CLBT4 NGB18N40CLBT4G GB18N40B NOR GATE IC Text: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB18N40CLBT4 NGB18N40CLB/D 18n40bg GB18N40BG 18n40b NGB18N40CLBT4 NGB18N40CLBT4G GB18N40B NOR GATE IC
18n40b Abstract: GB18N40B Text: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB18N40CLBT4 NGB18N40CLB/D 18n40b GB18N40B
18n40b Abstract: GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D Text: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB18N40CLBT4 NGB18N40CLB/D 18n40b GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D
N40B Abstract: g18n40 G18N40B 18n40b NGB18N40CLBT4 NGD18N40CLB NGD18N40CLBT4 4-30VDC Text: NGD18N40CLBT4, NGB18N40CLBT4 Product Preview Ignition IGBT 18 Amps, 400 Volts http://onsemi.com N–Channel DPAK, D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGD18N40CLBT4, NGB18N40CLBT4 r14525 NGD18N40CLB/D N40B g18n40 G18N40B 18n40b NGB18N40CLBT4 NGD18N40CLB NGD18N40CLBT4 4-30VDC
18n40b Abstract: GB18N40B GB18N40 ignition IGBT NGB18N40CLBT4 Text: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB18N40CLBT4 NGB18N40CLBT4 18n40b GB18N40B GB18N40 ignition IGBT
18n40b Abstract: GB18N40B GB18N40 Text: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB18N40CLBT4 NGB18N40CLB/D 18n40b GB18N40B GB18N40
NGB18N40CLBT4G Abstract: NGB18N40A Text: NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB18N40CLB, NGB18N40ACLB NGB18N40CLB/D NGB18N40CLBT4G NGB18N40A
BS170 116 Abstract: NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2 Text: Data Sheet Page Data Sheet Page Data Sheet Page 2N7000 17, 26 MMBF170LT3 12, 95 NTA4001NT1 11, 259 2N7000RLRA 17, 26 MMBF170LT3 12, 95 NTA4151PT1 11, 263 2N7000RLRM 17, 26 MMBF2201NT 11, 98 NTA4153NT1 11, 268 2N7000RLRP 17, 26 MMBF2202PT1 11, 102 NTB125N02R	Original	PDF	2N7000 2N7000RLRA 2N7000RLRM 2N7000RLRP 2N7000ZL1 2N7002L 2N7002LT1 2N7002LT3 BS107 BS107A BS170 116 NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2
ignition IGBT Abstract: No abstract text available Text: ON Semiconductor Selector Guide − Power MOSFET Products Ignition IGBT − Insulated Gate Bipolar Transistors VCE on (V) VGE = 4.0 V IC = 6.0 A VGE = 4.5 V IC = 10 A Min Energy Ratings Clamp Voltage Switching Speed (IC = 6.5 A) EAS (mJ) VCES (V) Resistive	Original	PDF	O-252) NGD8201NT4 NGD8205NT4 NGD18N40CLBT4 NGD15N41CLT4 O-264) NGB8202NT4 NGB8206NT4 NGB18N40CLBT4 ignition IGBT
NTP2955G Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature	Original	PDF	CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
1500w audio amplifier circuit Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies	Original	PDF	SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
MOSFET P-channel SOT-23 Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26	Original	PDF	2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Untitled Abstract: No abstract text available Text: NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	PDF	NGB18N40CLB, NGB18N40ACLB NGB18N40CLB/D
ANA 618 Abstract: voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE Text: SGD501/D REV 13, April 12, 2003 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION - Please see General Information Section EFFECTIVE DATE: APRIL 12, 2003  General Information Elimination Of Ozone Depleting Chemicals . . . .	Original	PDF	SGD501/D ANA 618 voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE