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    NE699M01 Search Results

    NE699M01 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE699M01 NEC NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION Original PDF
    NE699M01-T1 NEC NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION Original PDF

    NE699M01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6621 sot-23

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ IS21E NE699M01 NE699M01-T1 S21E 519 510 SOT-363 662 transistor 5555
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 • HIGH fT: 16 GHz TYP TOP VIEW • HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz, VCE = 2 V, Ic = 20 mA


    Original     		PDF NE699M01 NE699M01 OT-363 OT-23 OT143 24-Hour 6621 sot-23 RF NPN POWER TRANSISTOR C 10-12 GHZ IS21E NE699M01-T1 S21E 519 510 SOT-363 662 transistor 5555

    IC 7432

    Abstract: AT 1004 S12 IC 7432 power dissipation NE687 NE699M01 NE699M01-T1 S21E of IC 7432 S12 sot 23-6
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm HIGH fT: 16 GHz TYP at 2 V, 20 mA • LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz


    Original     		PDF NE699M01 NE699M01 NE687) OT363 24-Hour IC 7432 AT 1004 S12 IC 7432 power dissipation NE687 NE699M01-T1 S21E of IC 7432 S12 sot 23-6

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


    Original     		PDF P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    702 E

    Abstract: IC 7432 D 431 6-PIN 907 transistor 7432
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • HIGH OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 fT : 16 GHz TYP at 2 V, 20 mA • NE699M01 TOP VIEW LOW NOISE FIGURE: — NF =1.1 dB TYP at 2 GHz


    OCR Scan     		PDF NE699M01 NE699M01 NE687) OT363 OT-23 OT-10 24-Hour 702 E IC 7432 D 431 6-PIN 907 transistor 7432

    sl 0565 r

    Abstract: 6621 sot-23 p 0368 mini
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • HIGH NE699M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 fT : 16 GHz TYP TOP VIEW • HIGH GAIN: 2.1 ± 0.1 IS 21 e |2 = 14 dB TYP a tf = 2 GHz, V ce = 2 V, Ic = 20 mA


    OCR Scan     		PDF NE699M01 NE699M01 OT-363 OT-23 sl 0565 r 6621 sot-23 p 0368 mini

    t z 1037 519

    Abstract: 6621 sot-23 NE699M01
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 HIGH fT: 16 GHz TYP at 2 V, 20 mA TOP VIEW LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz 2.1 ± 0.1 -


    OCR Scan     		PDF NE699M01 NE699M01 NE687) OT363 t z 1037 519 6621 sot-23

    UPA827TF

    Abstract: UPA833TF NE685 UPA814T
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01


    OCR Scan     		PDF NE696M01 NE698M01 NE699M01 UPA806T UPA807T UPA808T UPA809T UPA814T NE685 NE686 UPA827TF UPA833TF

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363