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    MTP3N80 Search Results

    MTP3N80 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTP3N80 Motorola Switchmode Datasheet Scan PDF
    MTP3N80 Motorola European Master Selection Guide 1986 Scan PDF
    MTP3N80 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    MTP3N80 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP3N80 Unknown FET Data Book Scan PDF

    MTP3N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N80 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF MTP3N80 O-220

    3C80 philips

    Abstract: 3C80 ferrite 55310-A2 3C80 transformer PHILIPS toroidal core 3f3 MOC8100 3C80 3c80 material 55310-a2 core EI187-3C80
    Text: UNITRODE CORPORATION APPLICATION NOTE U-150 APPLYING THE UCC3570 VOLTAGE-MODE PWM CONTROLLER TO BOTH OFF-LINE AND DC/DC CONVERTER DESIGNS By Robert A. Mammano Vice President Advanced Technology Abstract BiCMOS processing provides the key to a new integrated PWM controller which offers higher switching frequencies at lower quiescent current drain while including new innovations in both performance and protection features.


    Original     		PDF U-150 UCC3570 48-to5V RN55D 3C80 philips 3C80 ferrite 55310-A2 3C80 transformer PHILIPS toroidal core 3f3 MOC8100 3C80 3c80 material 55310-a2 core EI187-3C80

    3C80 philips

    Abstract: 3C80 ferrite 55310-a2 core PHILIPS toroidal core 3f3 3C80 55310-A2 UCC3570 3c80 transformer core CORE i3 ARCHITECTURE 3C80 SPECIFICATIONS
    Text: UNITRODE CORPORATION APPLICATION NOTE U-150 APPLYING THE UCC3570 VOLTAGE-MODE PWM CONTROLLER TO BOTH OFF-LINE AND DC/DC CONVERTER DESIGNS By Robert A. Mammano Vice President Advanced Technology Abstract BiCMOS processing provides the key to a new integrated PWM controller which offers higher switching frequencies at lower quiescent current drain while including new innovations in both performance and protection features.


    Original     		PDF U-150 UCC3570 48-to5V 3C80 philips 3C80 ferrite 55310-a2 core PHILIPS toroidal core 3f3 3C80 55310-A2 3c80 transformer core CORE i3 ARCHITECTURE 3C80 SPECIFICATIONS

    SIEMENS 800

    Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80


    Original     		PDF O-220AB O-218 O-204 204AC O-238AA SIEMENS 800 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n

    SSH6N80

    Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
    Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0


    Original     		PDF MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020

    MTP3N80

    Abstract: mtp4n50e MTP3N95 MTP4N05L MTP4N06L MTP4N08 MTP4N40E MTP4N45 MTP4N50 P180
    Text: - M £ tt ± f £ t Vd s or € Vg s Vd g % V M (Ta:=25°C) * /CH * /CH (A) m (V) MTP3N80 MOT N 800 ±20 MTP3N95 MOT N 950 ±20 MTP3P25 MOT P MTP4N05L MOT MTP4N06L MOT MTP4N08 MOT MTP4N10 MOT MTP4N40E MOT MTP4N45 MOT N Ig s s Pd Id (nA) Vg s (V) < M A) Vd s


    OCR Scan     		PDF MTP3N80 O-220AB MTP3N95 MTP3P26 T0-220AB MTP4N05L MTP5P18 mtp4n50e MTP4N06L MTP4N08 MTP4N40E MTP4N45 MTP4N50 P180

    MTP2P45

    Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5


    OCR Scan     		PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP2P45 MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85

    MTP3N80

    Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60
    Text: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5


    OCR Scan     		PDF T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP3N80 MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E

    P3N80

    Abstract: 3N80 MTP3N75 mtp3n80 3N75 MOSFET 3N 200
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 3N75 M TM 3N80 M T P 3N 75 M T P 3N 80 Designer's Data Sheet Power Field Effect Transistor IM-Channel Enhancem ent-M ode Silicon G ate TM O S These TM O S P ow er FETs are designed fo r high vo ltag e , high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regu la to rs,


    OCR Scan     		PDF MTM/MTP3N75, P3N80 3N80 MTP3N75 mtp3n80 3N75 MOSFET 3N 200

    k 3561 MOSFET

    Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
    Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­


    OCR Scan     		PDF DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


    OCR Scan     		PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    MTP6N55

    Abstract: MTP2P45 IRF840 SELECTION GUIDE MTP1N55 MTP2N90 MTP4N90 MTP8N45 irf8408 MTP3N80 irf840
    Text: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5


    OCR Scan     		PDF T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP6N55 MTP2P45 IRF840 SELECTION GUIDE MTP1N55 MTP8N45 irf8408 MTP3N80 irf840

    55310-A2

    Abstract: 4N25 PHILIPS MTP3N80E clock u150 100 watt hf mosfet 12 volt U150D TOKO 3702
    Text: UNITRODE CORPORATION APPLICATION NOTE U-150 APPLYING THE UCC3570 VOLTAGE-MODE PWM CONTROLLER TO BOTH OFF-LINE AND DC/DC CONVERTER DESIGNS By Robert A. Mammano Vice President Advanced Technology Abstract BiCMOS processing provides the key to a new integrated PWM controller which offers higher switching frequen­


    OCR Scan     		PDF U-150 UCC3570 48-toSV 187-3C80 26AWG 31AWG 25AWG T68-52D 20AWG 262LYF-0077M 55310-A2 4N25 PHILIPS MTP3N80E clock u150 100 watt hf mosfet 12 volt U150D TOKO 3702

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G