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    MSG56BBB0L

    Abstract: No abstract text available
    Text: ACHIEVED HIGH-PERFORMANCE HIGH FREQUENCY CHARACTERSITIC WITH THE NEWEST FINE PROCESSIG TECHNOLOGY OF SiGeC HIGH-FREQUENCY TRANSISTOR MSG56BBA0LBF/BBB0LBF Unit : mm „ Overview The MSG56BBA0LBF and MSG56BBB0LBF are Silicon Germanium Carbon SiGeC transistors most suitable for low-noise


    Original     		PDF MSG56BBA0LBF/BBB0LBF MSG56BBA0LBF MSG56BBB0LBF MSG56BBB0L. MSG56BBA0LBF. MSG56BBB0L

    MSG56BBB0LBF

    Abstract: M008-27A dmb transistor MSG56BBA0LBF
    Text: DEVELOPED WITH THE NEWEST FINE PPROCESSING TECHNOLOGY OF SiGeC GENERAL-PURPOSE LOW NOISE TRANSISTOR MSG56BBA0LBF/BBB0LBF „ Overview The MSG56BBA0LBF and MSG56BBB0LBF are Silicon Germanium Carbon SiGeC transistors most suitable for low-noise amplifiers for various applications that operates at 0.8 GHz to 6 GHz.


    Original     		PDF MSG56BBA0LBF/BBB0LBF MSG56BBA0LBF MSG56BBB0LBF MSG56BBA0LBF, MSG56BBB0L. MSG56BBA0LBF. M008-27A dmb transistor