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    MMBTA65 Search Results

    MMBTA65 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBTA65 Fairchild Semiconductor PNP Darlington Transistor Original PDF
    MMBTA65 Fairchild Semiconductor PNP Darlington Transistor Original PDF
    MMBTA65 Fairchild Semiconductor PNP Darlington Transistor Scan PDF

    MMBTA65 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPSA65

    Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor

    MPSA65

    Abstract: MMBTA65 MPSA64 PZTA65
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MMBTA65 PZTA65 OT-23 OT-223 MPSA64 MPSA65 MMBTA65 PZTA65

    MPSA65

    Abstract: MPS-A65 MMBTA65 MPSA64 PZTA65
    Text: MPSA65 MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.


    Original     		PDF MPSA65 MMBTA65 PZTA65 OT-23 OT-223 MPSA64 MPSA65 MMBTA65 MPS-A65 PZTA65

    Untitled

    Abstract: No abstract text available
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MPSA65 MMBTA65 PZTA65 MPSA65 MMBTA65 OT-23 OT-223 MPSA64

    Untitled

    Abstract: No abstract text available
    Text: C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF OT-23 OT-223 MPSA64

    BTA65

    Abstract: PSA65
    Text: E E M C O N O U C TO R m MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS


    OCR Scan     		PDF MPSA65 MMBTA65 PZTA65 MPSA65 MMBTA65 PSA64 BTA65 PSA65

    FAIRCHILD SOT-223 MARK

    Abstract: MMBTA65 MPSA64 MPSA65 PZTA65
    Text: fv* '€2 CZ> T O R MMBTA65 SOT-23 PZTA65 B / PZTA65 TO-92 / MMBTA65 MPSA65 SOT-223 M a rk : 2 W PNP Darlington Transistor T h is d e v ic e is d e s ig n e d fo r a p p lic a tio n s re q u irin g e x tre m e ly high c u rre n t g a in at c u rre n ts to 80 0 m A . S o u rc e d fro m P roce ss 61.


    OCR Scan     		PDF MPSA65 MMBTA65 OT-23 PZTA65 OT-223 MPSA64 FAIRCHILD SOT-223 MARK MMBTA65 MPSA65 PZTA65

    Untitled

    Abstract: No abstract text available
    Text: S E IV ZS’NES wJ CZ>T O R • MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings


    OCR Scan     		PDF MPSA65 MMBTA65 PZTA65 MPSA64 MPSA65 MMBTA65

    Untitled

    Abstract: No abstract text available
    Text: M AXIM U M RATINGS Symbol MMBTA65 MMBTA56 VCEO -6 0 -8 0 Vdc Collector-Base Voltage v CBO -6 0 -8 0 Vdc Emitter-Base Voltage v EBO -4 .0 Vdc 'c - 500 m Adc Rating Collector-Emitter Voltage Collector Current — Continuous Unit MMBTA55LT1 MMBTA56LT1* CASE 318-07, STYLE 6


    OCR Scan     		PDF MMBTA65 MMBTA56 MMBTA55LT1 MMBTA56LT1* OT-23 O-236AB) OT-23 BTA55 BTA56

    MMBTA5551

    Abstract: EM401 MMBTA6520 MMBFJ174 MMBTA5401 j y w sot23 MMBTH918 smd diode 01C sot-23/BC327 SOT yo
    Text: edi ELECTRONIC DEVICES, INC. 21 GRAY O AK S AVENUE • Y O NK ERS, N E W YORK 10710 3 1 4 - 9 6 5 - 4 - 4 0 0 • 1- 5 0 0 - 6"7B - O B 2 B . FA X 9 1 4 - 9 6 5 - 5 5 3 1 E -M A IL : E D I - S A L E S @ I N T E R N E T M C I .C O M SURFACE MOUNT DEVICES TRANSISTORS


    OCR Scan     		PDF OT-23 MMBT2222A MMBT3904 MMBT4401 MMBT2369 MMBT5089 MMBTA06 MMBTA42 MMBTA5551 MMBTA6517 EM401 MMBTA6520 MMBFJ174 MMBTA5401 j y w sot23 MMBTH918 smd diode 01C sot-23/BC327 SOT yo

    ssot-6

    Abstract: MMBT pnp FJ sot23 sot 223 fairchild
    Text: Discrete Power and Signal Technologies Fairchild S em iconductor Selection Guides Surface Mount Bipolar Transistors G eneral Purpose A m p lifie rs and S w itches Part lc mA BV Min Number - Min M ax P ackage mA NPN I MMBT100 45 500 100 MMBT3904 40 200 ܧ


    OCR Scan     		PDF MMBT100 MMBT3904 MMBT2222A MMBT4401 MMBTA05 PZT2222A PZT3904 NMT2222A OT-23 ssot-6 MMBT pnp FJ sot23 sot 223 fairchild