ML309
Abstract: M151 MI31T MI31TA MI32T MI32TA MI37T MI38T MI51T MIB37T
Text: Infrared Emitting Diodes TYPEE p A.p V f MAX 2 6 1/2 NO. nm TYP (mW) (mA) (V) (mA) MI31T MI31TA 940 880 0.5 2.8 20 20 1.6 1.8 20 20 MI32T MI32TA 940 880 0.5 2.8 20 20 1.6 1.8 MI37T MIB37T 940 940 2.0 2.0 20 20 MI38T MIB38T 940 940 2.0 2.0 MI51T M151 TA 940
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MI31T
MI31TA
MI32T
MI32TA
MI37T
MIB37T
MI38T
MIB38T
1-45a
1-45b
ML309
M151
MI51T
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Untitled
Abstract: No abstract text available
Text: MI51T C R INFRARED EM ITTING DIODE O «4.98 0.196 DESCRIPTION 0.5<Q.Q2> MI51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. r *5.«! <Q.232> r 1.0(0.04) I i.3<0.05) 1 0.76 1 <0.03) <0.i6) Ut06<0.04> - LQ<Q.Q4>
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MI51T
MI51T
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HX 830
Abstract: MI51TA-2 MI51TA-3
Text: MICRO MI51TA-2 MI51TA-3 INFRARED EMITTING DIODE 04.98 " 0.196 DESCRIPTION MI51TA-2 & MI51TA-3 is GaAlAs infrared emitting diode molded in T -l 3/4 standard 5mm diameter clear transparent lens. 87 (0,34) 1.3 •(0.05) 1.0 (0.04)" 1-0 j“(0.04) 05.8 ^34.1 t 0.76
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MI51TA-2
MI51TA-3
MI51TA-2
100mA
200mW
230mW
HX 830
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MI51TA
Abstract: MIB51TA ncl 058 hx 002
Text: CRO M I51T A M IB 51T A INFRARED EMITTING DIODE DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T -l 3/4 standard 5mm diameter clear plastic package, with the lensing effect o f the package, and MIB51TA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS
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MI51TA
MIB51TA
MIB51TA
MI51TA
ncl 058
hx 002
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HX 830
Abstract: MI51TA-2 MI51TA-3
Text: MICRO IVllSllA-^ MI51TA-3 INFRARED EMITTING DIODE 04.98 0.196 DESCRIPTION 1.0 1.3 '(0.05) (0 .0 4 f MI51TA-2 & MI51TA-3 is GaAlAs infrared emitting diode molded in T -l 3/4 standard 5mm diam eter clear transparent lens. 87 (0.34) 1.0 (0.04) “ (0.04) af* X Ü ~ —
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MI51TA-2
MI51TA-3
MI51TA-2
MI51TA-3
100mA
100mA
200mW
230mW
10/xs,
64lna,
HX 830
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MI51TA
Abstract: MIB51TA
Text: MI51TA MIB51TA INFRARED EMITTING DIODE DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51JA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS
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MIB51TA
MI51TA
MIB51JA
100mA
180mW
MI51TA
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a106 diode
Abstract: MI51T diode A106
Text: CRO MI51T INFRARED EM ITTING DIODE «4.98 0.196 DESCRIPTION 0.5<0.02> MI51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. «5.« <Q.232> t.0<0.04) Jl i.3<0.05) 1 0.76 _ 1 <0.03) <0.i6) Ut06<0.04> - i.0<0.04>
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MI51T
MI51T
100mA
a106 diode
diode A106
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MI51TA
Abstract: MIB51TA em4070
Text: DESCRIPTION CRO MI51TA MIB51TA INFRARED EMITTING DIODE MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51TA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS
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MI51TA
MIB51TA
MIB51TA
MI51TA
em4070
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MI51T
Abstract: No abstract text available
Text: MI51T INFRARED EMITTING DIODE DESCRIPTION 04.98CO.Î96 MI51T is GaAIAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. 8.7 0.34) <0J 6> i9.0C0.75> < MIN. • • • ABSOLUTE MAXIMUM RATINGS 8.54«U> All dimension in mm(inch)
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MI51T
100mA
10/xs,
4351G
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Untitled
Abstract: No abstract text available
Text: MICRO MI51TA-2 MI51TA-3 INFRARED EMITTING DIODE 0 4 .9 8 " 0.196 D E SC R IPT IO N 1.3 ( 0 .05 ) MI51TA-2 & MI51TA-3 is GaAlAs infrared emitting diode molded in T -l 3/4 standard 5mm diameter clear transparent lens. 87 (0.34) 1.0 j~(0.04) 4.1 I 0.76 (0.16)
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MI51TA-2
MI51TA-3
MI51TA-2
MI51TA-3
I51TA-2
10/xs,
100mA
I51TA-3
230mW
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2G
1611G
1620G
1621-2G
1623G
1641G
1N4001
1N4002
1N4004
1N4005
2SA532
BC109 BC184 BC549
BC317
2SC734 Y
MS181A
BC159 8
2SC876
TTP31A
ML78M06A
BC357
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Untitled
Abstract: No abstract text available
Text: Blinking LED TYPE NO. MOGB517W SOURCE COLOUR Xp IV MIN Bin (m c d ) 630 565 10 5 IF=20mA 2.0 ~ 10 10 700 660 660 630 640 2.5 300 50 60 60 3 3 3 3 3 1.6 ~ 3.5 1.6 ~ 3.5 565 35 3 Orange Green VF (V) OPERATING VOLTAGE (V) PULSE RATE (Hz) 0.8-1.9 VIEWING ANGLE
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MOGB517W
MSB557D
MSB557TA
MSB557DA
MOB557D
MOB557DR
MGB557D
MSB558DA
MSB559TA
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ML309
Abstract: No abstract text available
Text: MICRO ELECTRONICS LTD SIE D • bOT17flfi GOÜ1G1S TTH ■ MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE p Àp V TYP mW (mA) f MAX (V) 1 2 01/2 1 PACKAGE CASE 35 35 03.2mm 0.69" lead 1-5 20 20 35 35 T-1 standard 03.0mm 1-43 2.0 2.0 100 100 30 18 03.0mm flangeless
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bOT17flfi
MI31T
MI31TA
MI32T
MI32TA
MI37T
MIB37T
MI38T
MIB38T
MI51T
ML309
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Untitled
Abstract: No abstract text available
Text: CRO MSGK51W HIGH EFFICIENCY RED/GREEN DUAL COLOR LAMP DESCRIPTION 04 .98 0.196 A red and green lamp made of GaAlAs, GaP offering a changing color characteristics dependent on the direction the lamp is biased. These two light emitting diodes are mounted
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MSGK51W
MI51T
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ML309
Abstract: No abstract text available
Text: Infrared Emitting Diodes 2 0 Vi degree PACKAGE CASE NO. 20 20 35 35 0 3.2mm 0.69" lead 1-4 1.6 1.8 20 20 35 35 T-l standard 0 3.0mm 1-61 20 20 2.0 2.0 100 100 30 18 0 3.0mm flangeless 1-7 1-8 2.0 2.0 20 20 2.0 2.0 100 100 30 20 0 3.0mm flangeless low profile lens
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MI31T
MI31TA
MI32T
MI32TA
MI33T
MIB33T
MI38T
MIB38T
MI51T
MI51TA
ML309
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