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    MGFC5214 Search Results

    MGFC5214 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC5214 Mitsubishi Q-Band 2-Stage Power Amplifier Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGFC5214 Q-Band 2-Stage Power Amplifier Circuit Topology Performance Characteristics Ta=25°C Specification Min. Frequeny 37 Linear Gain Typical Max. Unit 40 GHz 12 P1dB Vg2 Vd2 dB (23) dBm Input VSWR 2.0 Output VSWR


    Original
    PDF MGFC5214 178mA, 346mA

    capasitor

    Abstract: datasheet capasitor MGFC5214 40GHz power amplifier X199 mitsubishi y-160
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5214 Notice : This is not a final specification Some parametric limits are subject to change. Q-Band 2-Stage Power Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5214 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band High


    Original
    PDF MGFC5214 MGFC5214 180mA 340mA 40GHz capasitor datasheet capasitor 40GHz power amplifier X199 mitsubishi y-160

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5214 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Q-Band 2-Stage Power Am plifier DESCRIPTION BLOCK DIAGRAM The MGFC5214 is a GaAs MMIC chip especially


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