MGF4918D Search Results

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mit MGF4918D29 SUPER LOW NOISE INGAAS HEMT RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	MGF4918D29		19,950			1 - 10 - 100 - 1000 - 10000 -	Get Quote
mit MGF4918D Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	MGF4918D		732			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MGF4918D Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGF4918D		Mitsubishi	TAPE CARRIER SUPER LOW NOISE INGAAS HEMT		Scan	PDF

MGF4918D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MGF4918D Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D Text: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F	OCR Scan	PDF	GD-16 GD-15 GD-18 MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E12 MGF4918D MGF4919F MGF4919 MGF4319F MGF-4317D MGF4914D
MGF4310 Abstract: MGF4910 MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318 Text: Die_MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES a ^MITSUBISHI ELECTRONIC DEVICE GROUP D Series - 0.25um X 200um DESCRIPTION “T“ GATE STRUCTURE The super low noise HEMT device family is designed for applications requiring high performance acheiving ultra low noise figures.	OCR Scan	PDF	MGFC4410 MGF4310 MGF4910 200um 8E-30 MGF4914E-01 MGF4918E-01 12GHz, MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318
MGF4918D Abstract: MGF4914D mitsubishi mgf M5M27C102 MGF4910D MGF4316D MGF4916C mgf4916d A0523 MGF4917 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0 D OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: mtlimeters (inches)	OCR Scan	PDF	MGF4910D 491OD 12GHz MGF4914D: MGF4916D: MGF4917D: MGF4918D: -to-id-25 MGF4918D MGF4914D mitsubishi mgf M5M27C102 MGF4316D MGF4916C mgf4916d A0523 MGF4917
MGF4918D Abstract: MGF4910D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d Text: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to l< band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	PDF	MGF4910D 12GHz F4914D: F4916D: F4917D: F4918D: 12GHz MGF4914D MGF4918D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d