MA2Z331
Abstract: MA331
Text: Variable Capacitance Diodes MA2Z331 MA331 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 • Small series resistance: rD = 0.18 Ω (typ.) • Good linearity of C − V curve • Small type package, optimum for down-sizing of equipment 1 Unit Reverse voltage (DC)
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MA2Z331
MA331)
MA2Z331
MA331
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Untitled
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2Z331 MA331 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 • Small series resistance: rD = 0.18 Ω (typ.) • Good linearity of C − V curve • Small type package, optimum for down-sizing of equipment 1 Unit Reverse voltage (DC)
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MA2Z331
MA331)
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MA2Z331
Abstract: MA331
Text: Variable Capacitance Diodes MA2Z331 MA331 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 • Features • Small series resistance: rD = 0.18 Ω (typ.) • Good linearity of C − V curve • Small type package, optimum for down-sizing of equipment
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MA2Z331
MA331)
MA2Z331
MA331
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MA2Z331
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2Z331 Silicon epitaxial planar type Unit : mm INDICATES CATHODE VR 12 V Forward current DC IF 20 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 Reverse voltage (DC) 2.5 ± 0.2 Unit 0.16 − 0.06
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MA2Z331
IZ331
MA2Z331
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Untitled
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2Z331 MA331 Silicon epitaxial planar type Unit: mm 0.30+0.10 –0.05 • Small series resistance: rD = 0.18 Ω (typ.) • Good linearity of C − V curve • Small type package, optimum for down-sizing of equipment 1 Unit Reverse voltage (DC)
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MA2Z331
MA331)
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MA2Z331
Abstract: MA331
Text: Variable Capacitance Diodes MA2Z331 MA331 Silicon epitaxial planar type Unit : mm INDICATES CATHODE VR 12 V Forward current (DC) IF 20 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 Reverse voltage (DC) 2.5 ± 0.2 Unit
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MA2Z331
MA331)
MA2Z331
MA331
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Time-98
Abstract: ENFV AN6591FJM MA2Z331 XN06543 enfvj1 bs 6746 ST 6497 isl 6812
Text: ICs for Communication Equipment AN6591FJM Transmission / reception, single chip PLL IC for PHS, cordless telephone • Overview 50 0. 11 0.80 max 0.63 0.20±0.10 1 Seating plane 0.10 5.00±0.10 (1.10) 1 (0 11 .1 5) 12 44 (1.10) 5.00±0.10 6.20±0.10 (6.00)
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AN6591FJM
AN6591FJM
SDM00007AEB
Time-98
ENFV
MA2Z331
XN06543
enfvj1
bs 6746
ST 6497
isl 6812
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ENFV
Abstract: IC 6848 AN6591FJM MA2Z331 XN06543 ENFVJ1 6605 matsua
Text: ICs for Communication Equipment AN6591FJM Transmission / reception, single chip PLL IC for PHS, cordless telephone • Overview 3C 23 33 6.00 5.00±0.10 (1.10) 11 12 44 22 34 33 0.40 Seating plane (1.10) (0.48) 5.00±0.10 1 0.20±0.10 11 1 0.80 max. 12 44
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AN6591FJM
ENFV
IC 6848
AN6591FJM
MA2Z331
XN06543
ENFVJ1
6605 matsua
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MA2SV15
Abstract: No abstract text available
Text: Part Number List • Variable Capacitance Diodes Part Number Page Part Number Page Part Number Page Part Number Page Part Number Page MA26304 115 MA26V15 128 MA27V13 109 MA2S376 67 MA2Z360 27 MA26376 116 MA26V16 129 MN27V14 111 MA2S377 69 MA2Z365 35 MA26V01
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MA26304
MA26376
MA26V01
MA26V02
MA26V03
MA26V04
MA26V05
MA26V07
MA26V09
MA26V11
MA2SV15
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ON3105
Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S
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MN1001
MN1020215
MN1020407
MN1020415
MN1020715
MN102LF53G
MN1040
MN110
MN1101
MN115
ON3105
2sd2603
mn4117405
2sc901b
mn6520
MN1280
mn1225
MN6147C
2SC5573
GN2013
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AN6591FJM
Abstract: MA2Z331 XN06543
Text: ICs for Communication Equipment AN6591FJM Transmission / reception, single chip PLL IC for PHS, cordless telephone • Overview 3C 23 33 6.00 6.20±0.10 22 34 0.10 Seating plane 5.00±0.10 (1.10) 1 5.00±0.10 0.20±0.10 11 1 11 12 44 22 34 33 0.40 0.80 max.
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AN6591FJM
AN6591FJM
MA2Z331
XN06543
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marking code V6 33 surface mount diode
Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
Text: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3
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ADE-508-010A
ADE-508-016
ADE-508-017
HVL355B
HVL358B
HVL368B
HVL375B
HVL385B
marking code V6 33 surface mount diode
philips surface mount zener diode v6
zener diode application
IPS302
04BZ
1w402
DIODE marking S4 59A
marking 513 SOD-323
MARKING 621 SOD-323
1w379
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