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    MA2S077 Price and Stock

    Panasonic Electronic Components MA2S077G0L

    DIODE GP 35V 100MA SSMINI2-F4
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    DigiKey MA2S077G0L Reel 3,000
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    Panasonic Electronic Components MA2S07700L

    RF DIODE STANDARD 35V SSMINI2-F2
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    DigiKey MA2S07700L Digi-Reel 1
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    MA2S07700L Cut Tape
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    MA2S07700L Reel
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    MA2S077 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA2S077 Panasonic Silicon epitaxial planar type Original PDF
    MA2S077 Panasonic Diode Original PDF
    MA2S077 Panasonic Silicon Epitaxial Planar Type Band Switching Diode Original PDF
    MA2S07700L Panasonic RF Diodes, Discrete Semiconductor Products, DIODE SWITCH 35V 100MA SSMINI 2P Original PDF
    MA2S077G0L Panasonic Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SWITCHING 35V 0.1A SSMINI2 Original PDF

    MA2S077 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 0.15 min. Unit Reverse voltage VR 35 V Forward current IF 100 mA Operating ambient temperature *


    Original     		PDF 2002/95/EC) MA2S077 SC-79

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 VR Forward current IF Operating ambient temperature * Topr Storage temperature


    Original     		PDF 2002/95/EC) MA2S077

    MA2S077G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077G Silicon epitaxial planar type For band switching • Package ■ Features • Code SSMini2-F4 • Pin Name 1: Anode 2: Cathode Th an W is k y Th e a pro ou Fo an po du fo


    Original     		PDF 2002/95/EC) MA2S077G MA2S077G

    MA2S077G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For band switching • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter • Code


    Original     		PDF 2002/95/EC) MA2S077G MA2S077G

    MA2S077

    Abstract: No abstract text available
    Text: Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 5˚ • Low forward dynamic resistance rf • Less voltage dependence of diode capacity CD • SS-Mini type package, allowing downsizing of equipment and


    Original     		PDF MA2S077 MA2S077

    MA2S077

    Abstract: No abstract text available
    Text: Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit : mm For band switching 0.15 min. + 0.05 0.27 − 0.02 0.15 min. + 0.05 0.8 ± 0.1 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • SS-mini type package, allowing downsizing of equipment and


    Original     		PDF MA2S077 MA2S077

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077G Silicon epitaxial planar type For band switching • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol


    Original     		PDF 2002/95/EC) MA2S077G

    MA2S077

    Abstract: No abstract text available
    Text: Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit : mm For band switching 0.15 min. + 0.05 0.27 − 0.02 0.15 min. + 0.05 0.8 ± 0.1 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • SS-mini type package, allowing downsizing of equipment and


    Original     		PDF MA2S077 MA2S077

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 0.15 min. Unit Reverse voltage VR 35 V Forward current IF 100 mA Operating ambient temperature *


    Original     		PDF 2002/95/EC) MA2S077 SC-79

    MA2S077

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 Unit Reverse voltage VR 35 V Forward current IF 100 mA Operating ambient temperature *


    Original     		PDF 2002/95/EC) MA2S077 MA2S077

    Untitled

    Abstract: No abstract text available
    Text: MA111 Band Switching Diodes MA2S077 Silicon epitaxial planer type Unit : mm For band switching 0.15 min. 0.15 min. +0.05 voltage dependence of diode capacity CD ● SS-Mini +0.05 ● Less 0.27–0.02 forward dynamic resistance rf 0.8±0.1 ● Low 0.27–0.02


    Original     		PDF MA111 MA2S077 100MHz

    MA2S077

    Abstract: No abstract text available
    Text: Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 0.15 min. Unit Reverse voltage VR 35 V Forward current IF 100 mA Operating ambient temperature * Topr −25 to +85 °C Storage temperature


    Original     		PDF MA2S077 MA2S077

    MA2S077

    Abstract: marking AI RF
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 Unit Reverse voltage VR 35 V Forward current IF 100 mA Operating ambient temperature *


    Original     		PDF 2002/95/EC) MA2S077 MA2S077 marking AI RF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077G Silicon epitaxial planar type For band switching • Package ■ Features • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD


    Original     		PDF 2002/95/EC) MA2S077G

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


    Original     		PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


    Original     		PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


    Original     		PDF

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23