Untitled
Abstract: No abstract text available
Text: M65KA256AF 256Mbit 4 Banks x 4M x 16 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Features • 256Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 4MWords, each 16 bits wide ■ Supply Voltage – VDD = 1.7 to 1.95V (1.8V typical in
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M65KA256AF
256Mbit
133MHz
256Mbit
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PDF
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Untitled
Abstract: No abstract text available
Text: M65KA256AF 256Mbit 4 Banks x 4M x 16 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Features • 256Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 4MWords, each 16 bits wide ■ Supply Voltage – VDD = 1.7 to 1.95V (1.8V typical in
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Original
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M65KA256AF
256Mbit
133MHz
256Mbit
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PDF
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M39P0R1080E4
Abstract: M39P0R9080E4 M58PR001LE M58PR512LE M39P0R09080E4 BCAS SD
Text: M39P0R9080E4 M39P0R1080E4 512 Mb or 1 Gb x16, multiple bank, multilevel, burst Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 512 Mbit (32 Mb x16) or 1 Gbit (64 Mb ×16) multiple bank, multilevel, burst)
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M39P0R9080E4
M39P0R1080E4
TFBGA165
64-bit
M39P0R1080E4
M39P0R9080E4
M58PR001LE
M58PR512LE
M39P0R09080E4
BCAS SD
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PDF
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TFBGA105
Abstract: M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit
Text: M39P0R9080E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M39P0R9080E0
TFBGA105
TFBGA105
M58PR512J
JESD97
M39P0R9080E0
TFBGA-105
strataflash 512mbit
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PDF
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RAS 0510
Abstract: NAND98R3M0 NAND99R NAND99W3M1 Numonyx MCP nand98 SDR256 NAND98W NAND98W3M0 NAND98R
Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features n n n Packages – MCP (multichip package) – PoP (package on package) Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)
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256/512-Mbit
x8/x16,
528-byte
256/512-Mbit
x16/x32,
x8/x16)
TFBGA107
TFBGA149
TFBGA137
LFBGA137
RAS 0510
NAND98R3M0
NAND99R
NAND99W3M1
Numonyx MCP
nand98
SDR256
NAND98W
NAND98W3M0
NAND98R
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PDF
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NAND98W3M0
Abstract: NAND98R3M0 NAND99R NAND98R
Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features Packages – MCP (multichip package) – PoP (package on package) • Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)
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Original
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256/512-Mbit
x8/x16,
528-byte
256/512-Mbit
x16/x32,
x8/x16)
TFBGA107
TFBGA149
TFBGA137
TFBGA152
NAND98W3M0
NAND98R3M0
NAND99R
NAND98R
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