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    M58WR064E Price and Stock

    Micron Technology Inc M58WR064EB70ZB6

    IC FLASH 64MBIT PARALLEL 56VFBGA
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    M58WR064E Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M58WR064EB STMicroelectronics 64 MBIT (4MB x 16, MULTIPLE BANK, BURST) 1.8V SUP Original PDF
    M58WR064EB10ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Multiple Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58WR064EB70ZB6 STMicroelectronics 64 MBIT (4MB x 16, MULTIPLE BANK, BURST) 1.8V SUPPLY FLASH MEMORY Original PDF
    M58WR064EB70ZB6 STMicroelectronics Memory, Integrated Circuits (ICs), IC FLASH 64MBIT 70NS 56VFBGA Original PDF
    M58WR064EB70ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Multiple Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58WR064EB80ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Multiple Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58WR064EBZB STMicroelectronics 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory Original PDF
    M58WR064ET STMicroelectronics 64 MBIT (4MB x 16, MULTIPLE BANK, BURST) 1.8V SUP Original PDF
    M58WR064ET10ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Multiple Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58WR064ET70ZB6T STMicroelectronics 64 MBit (4 MBit x 16, Multiple Bank, Burst) 1.8 V Supply Flash Memory Original PDF
    M58WR064ET80ZB6T STMicroelectronics 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory Original PDF
    M58WR064ETZB STMicroelectronics 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory Original PDF
    M58WR064E-ZBT STMicroelectronics 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory Original PDF

    M58WR064E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A0-A21

    Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064ET M58WR064EB 54MHz VFBGA56 A0-A21 CR10 M58WR064EB M58WR064ET VFBGA56

    Untitled

    Abstract: No abstract text available
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064ET M58WR064EB 54MHz VFBGA56

    Untitled

    Abstract: No abstract text available
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064ET M58WR064EB 54MHz VFBGA56

    AN1664

    Abstract: M58WR064EB M58WR064ET M58WR128EB M58WR128ET
    Text: AN1664 APPLICATION NOTE Software Drivers for the M58WR064E and M58WR128E Flash Memories CONTENTS • M58WR064E AND M58WR128E PROGRAMMING MODEL ■ HOW TO USE THE SOFTWARE DRIVER ■ SOFTWARE LIMITATIONS ■ CONCLUSION ■ REVISION HISTORY This application note describes how to use library source code


    Original     		PDF AN1664 M58WR064E M58WR128E M58WR128E M58WR064ET, M58WR064EB, M58WR128ET M58WR128EB M58WR064ET AN1664 M58WR064EB

    unlock mobile phones codes

    Abstract: unlock mobile codes use of microprocessors in mobile phones M58W064 imei M58WR064 M58WR064EB M58WR064ET sim information 0.13Um ST
    Text: TA255 TECHNICAL ARTICLE M58WR064x : An Innovative Family of Flexible Flash Memories for Mobile Communications Marco Redaelli, Flash Memory Division, STMicroelectronics, Agrate, Italy Of all applications, mobile communication applications and in particular cellular phones consume


    Original     		PDF TA255 M58WR064x unlock mobile phones codes unlock mobile codes use of microprocessors in mobile phones M58W064 imei M58WR064 M58WR064EB M58WR064ET sim information 0.13Um ST

    A0-A21

    Abstract: J-STD-020B M30W0R6500T0 LFBGA88 AI08599
    Text: M30W0R6500T0 96 Mbit 64 + 32Mb, x16, Multiple Bank, Burst, Flash Memories 1.8V Supply, Multi-Chip Package FEATURES SUMMARY • ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Flash Memory SUPPLY VOLTAGE


    Original     		PDF M30W0R6500T0 8810h 8814h 54MHz A0-A21 J-STD-020B M30W0R6500T0 LFBGA88 AI08599

    cfi commands

    Abstract: A0-A21 J-STD-020B M36W0R6030B0 M36W0R6030T0
    Text: M36W0R6030T0 M36W0R6030B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 8 Mbit SRAM • SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V


    Original     		PDF M36W0R6030T0 M36W0R6030B0 512Kb 8810h 8811h cfi commands A0-A21 J-STD-020B M36W0R6030B0 M36W0R6030T0

    A25L020AO-F

    Abstract: rtd2122l n25q128a13 cFeon EN25T80 EN25T80 wt61p8 A25L5120-F WT6702F pm25w020 GD25Q40
    Text: Page 1 of 69 Dataman-48XP/48UXP Version 8.10 <ALL> Device List ACTRANS AC25LV010 *8SO AC29LV400B *44PS AC29LV400T *44PS AC39LV010 *32PLCC AC39LV020 *32PLCC AC39LV040 *32PLCC AC39LV080 *40TS AC39LV512 *32PLCC AC39LV800 *48TS SDP-UNIV-16SO SDP-UNIV-44PS SDP-UNIV-44PS


    Original     		PDF Dataman-48XP/48UXP AC25LV010 AC29LV400B AC29LV400T AC39LV010 32PLCC AC39LV020 AC39LV040 A25L020AO-F rtd2122l n25q128a13 cFeon EN25T80 EN25T80 wt61p8 A25L5120-F WT6702F pm25w020 GD25Q40