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    Abstract: 260uH LZP80N06P
    Text: LZP80N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge BVDSS=60V , • Wide Expanded Safe Operating Area RDS ON =0.014Ω, Application ID=84 A • DC Tools


    Original     		PDF LZP80N06P above25 to175 ID84 260uH LZP80N06P