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    Untitled

    Abstract: No abstract text available
    Text: DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 LN30640 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat)* (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		DIM1500ESM33-TL000 DS6112-1 LN30640) PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 LN30640 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat)* (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		DIM1500ESM33-TL000 DS6112-1 LN30640) PDF