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    Untitled

    Abstract: No abstract text available
    Text: DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 LN30637 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		PDF DIM1000NSM33-TL000 DS6109-1 LN30637)

    DIM1000NSM33-TL000

    Abstract: DIM1000NSM33-TL
    Text: DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 LN30637 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		PDF DIM1000NSM33-TL000 DS6109-1 LN30637) DIM1000NSM33-TL000 DIM1000NSM33-TL