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    Abstract: No abstract text available
    Text: N AMER P H IL IP S /D IS C R E T E fc>3E D • LLS3331 0030flflS 311 H A P X Product Specification Philips Sem iconductors BUK657-400B PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


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    s3331

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS LXEE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 January 1992 Philips Semiconductors o PHILIPS bt,S3331 0035073 MTS Prelim inary specification PhiMps Semiconductors


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    PDF LXEE18300X S3331 LXE18300X 350fll