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    LH5116 Price and Stock

    Sharp Microelectronics of the Americas LH5116-10

    IC SRAM 16KBIT PARALLEL 24DIP
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    DigiKey LH5116-10 Tube
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    Bristol Electronics LH5116-10 100
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    Quest Components LH5116-10 12
    • 1 $125
    • 10 $106.25
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    ComSIT USA LH5116-10 12
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    Sharp Microelectronics of the Americas LH5116-10F

    IC SRAM 16KBIT PARALLEL 24DIP
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    DigiKey LH5116-10F Tube
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    Bristol Electronics LH5116-10F 2 1
    • 1 $56.16
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    Quest Components LH5116-10F 1
    • 1 $60.84
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    Sharp Microelectronics of the Americas LH5116NA-10

    IC SRAM 16KBIT PARALLEL 24SOP
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    DigiKey LH5116NA-10 Tube 510
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    Bristol Electronics LH5116NA-10 37
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    Quest Components LH5116NA-10 1,669
    • 1 $3.74
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    LH5116NA-10 237
    • 1 $7.5
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    LH5116NA-10 29
    • 1 $7.5
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    LH5116NA-10 5
    • 1 $9.1902
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    ComSIT USA LH5116NA-10 1,890
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    Chip 1 Exchange LH5116NA-10 3
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    Sharp Microelectronics of the Americas LH5116NA-10F

    IC SRAM 16KBIT PARALLEL 24SOP
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    DigiKey LH5116NA-10F Tube
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    Sharp Microelectronics of the Americas LH5116HD-10

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    Bristol Electronics LH5116HD-10 1,440
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    Quest Components LH5116HD-10 223
    • 1 $9.75
    • 10 $9.75
    • 100 $4.225
    • 1000 $3.9
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    Find more LH5116 price and stock on Findchips.com

    LH5116 Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH5116 Sharp CMOS 16K (2K x 8) Static RAM Original PDF
    LH511610 Sharp 16K Slow SRAM (95K) Original PDF
    LH5116-10 Sharp CMOS 16K (2K x 8)static RAM Original PDF
    LH5116-10 Sharp CMOS 16K (2K x 8) Static RAM Original PDF
    LH5116-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH5116-10 Sharp CMOS 16K (2K x 8) Static RAM Scan PDF
    LH5116-10F Sharp IC SRAM CHIP ASYNC SINGLE 5V 16KBIT 2KX8 100NS DIP Original PDF
    LH5116-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH5116-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH5116D10 Sharp 16K Slow SRAM (95K) Original PDF
    LH5116D-10 Sharp CMOS 16K (2K x 8)static RAM Original PDF
    LH5116D-10 Sharp CMOS 16K (2K x 8) Static RAM Original PDF
    LH5116D-10 Sharp CMOS 16K (2K x 8) Static RAM Scan PDF
    LH5116D-10 Sharp CMOS 16K (2K x 8) Static RAM Scan PDF
    LH5116D-10F Sharp IC SRAM CHIP ASYNC SINGLE 5V 16KBIT 2KX8 100NS 24SK-DIP Original PDF
    LH5116H Sharp CMOS 16K (2K x 8) Static RAM Original PDF
    LH5116-H Sharp CMOS 16K (2K x 8) Static RAM Original PDF
    LH5116H10 Sharp 16K Slow SRAM (95K) Original PDF
    LH5116H-10 Sharp CMOS 16K (2K x 8)static RAM Original PDF
    LH5116H-10 Sharp CMOS 16K (2K x 8) Static RAM Original PDF

    LH5116 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH5116-10F

    Abstract: 13B1
    Text: PRODUCT SPECIFICATION Integrated Circuits Group LH5116-10F 16K SRAM Model Number: LH511613 Spec. Issue Date: Oct. 26, 2004 Spec No: EL16X147 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited


    Original     		PDF LH5116-10F LH511613) EL16X147 LH5116-10F 13B1

    5116 ram

    Abstract: LH5116H DIP024-P-0600 SOP024-P-0450B 0450b
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).


    Original     		PDF LH5116/H LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil 24-PIN 5116 ram LH5116H DIP024-P-0600 SOP024-P-0450B 0450b

    LH5116S

    Abstract: LH5116SN
    Text: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 × 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 µW (MAX.) • Fully-static operation • Three-state outputs • Single +3 V power supply


    Original     		PDF LH5116S 24-pin, 450-mil LH5116S 24-PIN 5116S-5 24SOP OP024-P-0450B) LH5116SN

    LH5116H

    Abstract: No abstract text available
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).


    Original     		PDF LH5116/H LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil 24-PIN LH5116H

    LH5116NA-10F

    Abstract: 13B1 LH5116NA
    Text: PRODUCT SPECIFICATION Integrated Circuits Group LH5116NA-10F 16K SRAM Model Number: LH5116NC Spec. Issue Date: Oct. 22, 2004 Spec No: EL16X148 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited


    Original     		PDF LH5116NA-10F LH5116NC) EL16X148 LH5116NA-10F 13B1 LH5116NA

    lh5116na

    Abstract: 13B1
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH5116NA-10FE 16K Static RAM Model Number: LH5116N9 Spec. Issue Date: October 8, 2004 Spec No: EL16X048 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited


    Original     		PDF LH5116NA-10FE LH5116N9) EL16X048 lh5116na 13B1

    5116 ram

    Abstract: LH5116H LH5116HN
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).


    Original     		PDF LH5116/H LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil 24-PIN 5116 ram LH5116H LH5116HN

    7326

    Abstract: 13B1 LH5116NA SHARP
    Text: LH5116NA sharp 2 LH5116NA sharp 3 LH5116NA sharp 4 LH5116NA sharp 5 LH5116NA sharp 6 LH5116NA sharp 7 LH5116NA sharp 8 LH5116NA sharp 9 LH5116NA sharp 10 LH5116NA 11 LH5116NA 12 LH5116NA sharp 13 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications if any are for standard use; See Important Restrictions for limitations on special applications. See Limited


    Original     		PDF LH5116NA 7326 13B1 LH5116NA SHARP

    LH5116H

    Abstract: No abstract text available
    Text: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode


    OCR Scan     		PDF LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil LH5116/H 24-pin LH5116H

    Untitled

    Abstract: No abstract text available
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).


    OCR Scan     		PDF LH5116/H LH5116/H 24-PIN Three-sP-0600) 24-pin, 300-mil DIP024-P-0300)

    Untitled

    Abstract: No abstract text available
    Text: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 x 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 (MAX.) • Fully-static operation • Three-state outputs • Single +3 V power supply


    OCR Scan     		PDF LH5116S 24-pin, 450-mil LH5116S 24-PIN \I02\Z 450-mii

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES * S tic RAMs Process C apacity Configuration Model No. A ccess tim e ns 70 80 90 100 120 LH5116 16k Full CMOS 64k 2k X 8 8k X 8 LH5116H f- Supply voltage : 5 V * 10% QpewBng tew ^raw » : ~ 40to85'C LH5116S j- Supply voltage : 3 V ± 10% LH5164A


    OCR Scan     		PDF LH5116 LH5116H LH5116S LH5164A LH5164AH 40to85 LH5164AV LH51V256H LH5268A LH52256A

    Untitled

    Abstract: No abstract text available
    Text: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 nW (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process


    OCR Scan     		PDF LH5116 LH5116H: 24-pin, 600-mil 300-mil 450-mil, LH5116 24-PIN

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


    OCR Scan     		PDF LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256

    Untitled

    Abstract: No abstract text available
    Text: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode


    OCR Scan     		PDF LH5116 LH5116H: 24-pin, 600-mil 300-mil 450-mil, LH5116 24-PIN

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES Low voltage operation Bit Capacity configuration 16 k 64k x8 x8 ★ Access time Supply current ns MAX. Cycle time Operating Standby (ns) MIN. (mA) MAX. (mA) MAX. Model No. LH5116SN x8 x8 1M x 16 2M x 16 *1 *5 *7 Supply Operating voltage temp. (V)


    OCR Scan     		PDF 24SOP LH5116SN LH5164AVN/AVT LH5164AV3HN LH5164AVHN/AVHT LH5164AST LH5164ASHN/ASHT LH51V256N/T-85SL LH51V256HN/HT-85SL LH52CV256N/T-10LL

    lh5116na-10

    Abstract: LH5116N
    Text: SHARP CORP blE D m LH5116 ÜOOtî t 7fl b3b «SRPJ CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization • Access time: 100 ns (MAX.) The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process


    OCR Scan     		PDF LH5116 LH5116H: 24-pin, 600-mil 300-mi 450-mi 24-PIN lh5116na-10 LH5116N

    lh5168

    Abstract: No abstract text available
    Text: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full


    OCR Scan     		PDF LH5116 LH51116H LH5116S LH5168 LH5168H LH5168V LH5168S LH5168SH LH5164AH 5164AV

    0450B

    Abstract: 5116d
    Text: LH5116/H CMOS 16K 2K X 8 Static RAM FEATURES DESCRIPTION • 2,048 The LH5116/H are static RAMs organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (t0E).


    OCR Scan     		PDF LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil LH5116/H 24-PIN 0450B 5116d

    lh5116na-10

    Abstract: No abstract text available
    Text: LH5116 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate C M O S process technology. It features high speed access in read mode using output enable (toe).


    OCR Scan     		PDF LH5116 LH5116H: 24-pin, 600-mil 300-mil 450-mil, LH5116 24-PIN lh5116na-10

    Untitled

    Abstract: No abstract text available
    Text: LH5116S FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Low power consumption: Operating: 33 mW (MAX.) Standby: 3.3 (MAX.) • j Fully static operation • Three-state outputs • Single +3 V power supply • Package: 24-pin, 450-mil SOP


    OCR Scan     		PDF LH5116S LH5116S 24-PIN 24-pin, 450-mil OP24-P-450) LH5116SN-10

    Untitled

    Abstract: No abstract text available
    Text: LH5116S CM O S 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116 S is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate C M O S process technology. It operates at a low supply voltage of 3 V ±10%.


    OCR Scan     		PDF LH5116S LH5116 24-pin, 450-mil 24-PIN LH5116S LH5116SN

    Untitled

    Abstract: No abstract text available
    Text: LH5116S FEATURES CMOS 16K 2K x 8 Static RAM PIN CONNECTIONS • 2,048 x 8 bit organization 24 - PIN SOP TOP VIEW • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (MAX.) Standby: 3.3 [iW (MAX.) • Fully-static operation • Three-state outputs


    OCR Scan     		PDF LH5116S 24-pin, 450-mil LH5116S 24SOP OP024-P-0450B) 450-mii

    LH5116N

    Abstract: No abstract text available
    Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).


    OCR Scan     		PDF LH5116/H LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil 24-PIN LH5116N